| Presentation | 1996/12/5 Quantum Mechanical Analysis of Conduction Mechanism for Thin Oxide-Nitride-Oxide Films under Electric Field Concentration. N. MATSUO, H. FUJIWARA, T. MIYOSHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In the analysis of the conduction mechanism of thin oxide-nitride-oxide (0N0) films under the electric field concentration for t he low and negative applied voltage, the leakage currents calculated by the WKB approximation assuming the direct tunneling(DT) do not precisely free to the mussed data. The purpose of this paper is, fist, to carry out the fitting of the leakage currents calculated by the WKB method to the measured data by considering the Fermi energy (η) of the poly-Si. The fitting result indicates that the considering ofη is important for the calculation of DT current by the WKB method. Secondly, the wave function and the transmission coefficient are calculated by solving the S chrodinger equation. It is found that the electric field concentration activates the DT of the thin ONO films. Thirdly, the relationship between the transmission coefficient of the electron and the electric field concentration is discussed for the asymmetric double barriers such as the present ONO films. It is found that the peak value of the resonant tunneling (RT) becomes very small because of the asymmetry of the potentials mid the electric field concentration activates RT mechanism. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thin ONO films / electric field concentration / WKB approximation / direct tunneling / transmission coefficient / asymmetric double barriers / resonant tunneling |
| Paper # | SDM96-152 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quantum Mechanical Analysis of Conduction Mechanism for Thin Oxide-Nitride-Oxide Films under Electric Field Concentration. |
| Sub Title (in English) | |
| Keyword(1) | thin ONO films |
| Keyword(2) | electric field concentration |
| Keyword(3) | WKB approximation |
| Keyword(4) | direct tunneling |
| Keyword(5) | transmission coefficient |
| Keyword(6) | asymmetric double barriers |
| Keyword(7) | resonant tunneling |
| 1st Author's Name | N. MATSUO |
| 1st Author's Affiliation | Deparmlent of Electrical & Electronic Engineering, Yamaguchi University() |
| 2nd Author's Name | H. FUJIWARA |
| 2nd Author's Affiliation | Department of Electrical & Electronic Engineering, Yamaguchi University |
| 3rd Author's Name | T. MIYOSHI |
| 3rd Author's Affiliation | Department of Electrical & Electronic Engineering, Yamaguchi University |
| Date | 1996/12/5 |
| Paper # | SDM96-152 |
| Volume (vol) | vol.96 |
| Number (no) | 395 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |