Presentation	1996/12/5 Oxide-Voltage and Its Polarity Dependence of Interface State Generation in Si MOS Capacitors Akihiro SHIMADA, Masao INOUE, Junji SHIRAFUJI,
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Abstract(in English)	The generation of two kinds of above-midgap interface states in (100) n-Si MOS capacitors with various oxide thincknesses when subjected to F-N tunneling electron injection has been studied by means of a.c. conductance measurement. The oxide-voltage and its polarity dependence of interface state generation efficiencyη_ are investigatedη_ is always larger by about 2 orders of magnitude when electrons are injected from the gate poly-Si than when they are injected from the Si substrate, andη_ for both polarities depends similarly on the oxide voltages. The critical interface state density D_ for breakdown calculated by usingη_ and Q_ (charge-to-breakdown) reported so far is found relatively independent of oxide voltage and its polarity. This indicate that the number of defects is responsible for TDDB rather than the amount of injected charges. The mechanism of interface state generation and its stress-polarity dependence are hocused
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	MOS capacitors / Si/SiO_2 interface states / F-N tunneling electron injection / generation efficiency
Paper #	SDM96-151
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Conference Information
Committee	SDM
Conference Date	1996/12/5(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Oxide-Voltage and Its Polarity Dependence of Interface State Generation in Si MOS Capacitors
Sub Title (in English)
Keyword(1)	MOS capacitors
Keyword(2)	Si/SiO_2 interface states
Keyword(3)	F-N tunneling electron injection
Keyword(4)	generation efficiency
1st Author's Name	Akihiro SHIMADA
1st Author's Affiliation	Department of Electrical Engineering, Faculty of Engineering, Osaka University()
2nd Author's Name	Masao INOUE
2nd Author's Affiliation	Department of Electrical Engineering, Faculty of Engineering, Osaka University
3rd Author's Name	Junji SHIRAFUJI
3rd Author's Affiliation	Department of Electrical Engineering, Faculty of Engineering, Osaka University
Date	1996/12/5
Paper #	SDM96-151
Volume (vol)	vol.96
Number (no)	395
Page	pp.pp.-
#Pages	7
Date of Issue