Presentation | 1996/12/5 Low Temperature Processing of Ultra Thin SiO_2 film for Gate Insulator T Koike, T. Ftitatsuyama, S. Muranaka, T. Fuyuki, H. Matsunami, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Ultra thin SiO_2 films (1.8-6.8nm) were formed at low temperatures(300- 500℃) using O_2 excited by microwave, and electrical properties of these SiO_2 films were investigated. Although Si was changed into SiO_2 in a short time, there were traps in these films. But exposing excited O_2 for a long time, SiO_2 films which have good electrical properties like thermal SiO_2 were obtained. Using MOS structure, the good SiO_2/Si interface properties was confirmed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ultra thin SiO_2 film / Remote Plasma Method |
Paper # | SDM96-149 |
Date of Issue |
Conference Information | |
Committee | SDM |
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Conference Date | 1996/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low Temperature Processing of Ultra Thin SiO_2 film for Gate Insulator |
Sub Title (in English) | |
Keyword(1) | ultra thin SiO_2 film |
Keyword(2) | Remote Plasma Method |
1st Author's Name | T Koike |
1st Author's Affiliation | Dept. of Electronic Science and Eng., Kyoto University() |
2nd Author's Name | T. Ftitatsuyama |
2nd Author's Affiliation | Dept. of Electronic Science and Eng., Kyoto University |
3rd Author's Name | S. Muranaka |
3rd Author's Affiliation | Dept. of Electronic Science and Eng., Kyoto University |
4th Author's Name | T. Fuyuki |
4th Author's Affiliation | Dept. of Electronic Science and Eng., Kyoto University |
5th Author's Name | H. Matsunami |
5th Author's Affiliation | Dept. of Electronic Science and Eng., Kyoto University |
Date | 1996/12/5 |
Paper # | SDM96-149 |
Volume (vol) | vol.96 |
Number (no) | 395 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |