Presentation 1996/12/5
Low Temperature Processing of Ultra Thin SiO_2 film for Gate Insulator
T Koike, T. Ftitatsuyama, S. Muranaka, T. Fuyuki, H. Matsunami,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Ultra thin SiO_2 films (1.8-6.8nm) were formed at low temperatures(300- 500℃) using O_2 excited by microwave, and electrical properties of these SiO_2 films were investigated. Although Si was changed into SiO_2 in a short time, there were traps in these films. But exposing excited O_2 for a long time, SiO_2 films which have good electrical properties like thermal SiO_2 were obtained. Using MOS structure, the good SiO_2/Si interface properties was confirmed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ultra thin SiO_2 film / Remote Plasma Method
Paper # SDM96-149
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Conference Information
Committee SDM
Conference Date 1996/12/5(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Temperature Processing of Ultra Thin SiO_2 film for Gate Insulator
Sub Title (in English)
Keyword(1) ultra thin SiO_2 film
Keyword(2) Remote Plasma Method
1st Author's Name T Koike
1st Author's Affiliation Dept. of Electronic Science and Eng., Kyoto University()
2nd Author's Name T. Ftitatsuyama
2nd Author's Affiliation Dept. of Electronic Science and Eng., Kyoto University
3rd Author's Name S. Muranaka
3rd Author's Affiliation Dept. of Electronic Science and Eng., Kyoto University
4th Author's Name T. Fuyuki
4th Author's Affiliation Dept. of Electronic Science and Eng., Kyoto University
5th Author's Name H. Matsunami
5th Author's Affiliation Dept. of Electronic Science and Eng., Kyoto University
Date 1996/12/5
Paper # SDM96-149
Volume (vol) vol.96
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue