| Presentation | 1996/12/5 Optical Characterization of Si Surface Having Ultrathin Oxide and Plasma-damaged Layer Takaaki IMAI, Koji ERIGUCHI, Akira FUJIMOTO, Masanori OKUYAMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The Si substrate damage induced by ion implantation and O_2 plasma exposure has been characterlzed by photo reflectance (PR) and Raman spectroscopy. The PR signal intensity of As ion-implanted Si drastically decreases accompanying the structural change of crystal Si. The plasma exposure also reduces the signal intensity accompanying the introduction of oxygen into Si substrate. This result indicates the plasma-induced reduction of surface modulation field at the Si surface. It has been also observed the PR spectrum of M0S structure decreases after the high field application to the oxide. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Photoreflectance / Raman spectroscopy / ion implantation / plasma process / SiO_2/Si interface |
| Paper # | SDM96-148 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optical Characterization of Si Surface Having Ultrathin Oxide and Plasma-damaged Layer |
| Sub Title (in English) | |
| Keyword(1) | Photoreflectance |
| Keyword(2) | Raman spectroscopy |
| Keyword(3) | ion implantation |
| Keyword(4) | plasma process |
| Keyword(5) | SiO_2/Si interface |
| 1st Author's Name | Takaaki IMAI |
| 1st Author's Affiliation | Department of Electrical Engineering Faculty of Engineering Science, Osaka University() |
| 2nd Author's Name | Koji ERIGUCHI |
| 2nd Author's Affiliation | Semiconductor Research Center, Matsushita Electric Ind. Co , Ltd. |
| 3rd Author's Name | Akira FUJIMOTO |
| 3rd Author's Affiliation | department of Electrical Engineering, Wakayama National College of Technolog |
| 4th Author's Name | Masanori OKUYAMA |
| 4th Author's Affiliation | Department of Electrical Engineering, Faculry of Engineering Science, Osaka University |
| Date | 1996/12/5 |
| Paper # | SDM96-148 |
| Volume (vol) | vol.96 |
| Number (no) | 395 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |