| Presentation | 1996/12/5 Structural relaxation in gate oxide by phosphorous redistribution K. Morino, S. Miyazaki, M. Hirose, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Phosphorus incorporation and the structural modification in ultra-thin gate oxides for fabricating n^+ Poly-Si gates have been systematically investigated by using XPS and FT-IR-ATR. It is found that diffused phosphorus atoms in gate oxides pile up near the SiO_2/c-Si interface when phosphorus diffusion is carried out at 900℃ for 10 min for undoped poly-Si gate and subsequent annealing at 900℃ for 10 min. P2p XB core level spectra indicate four-fold coordinated phosphorus atoms in the oxide together with a three-fold coordinated P=0 double bonds in the Si0_2 network. Also a red shift in the SiO_2 LO phonon frequency observed in a region within 2nm from the interface is small in the case of phosphorus doped SiO_2 as compared to the case of pure SiO_2. This implies that compressive stress near the Si0_2/c-Si interface is relaxed by incorporation of three-fold coordinated phosphorus atoms in the Si0_2 matrix It is also verified that no significant change in the valence band density of states and the bandgap value of SiO_2 is caused by phosphorus incorporation up to 4x10^<20>cm^<-3> |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | phosphorus / redistribution / pile-up / compressive stress / structural relaxation |
| Paper # | SDM96-147 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Structural relaxation in gate oxide by phosphorous redistribution |
| Sub Title (in English) | |
| Keyword(1) | phosphorus |
| Keyword(2) | redistribution |
| Keyword(3) | pile-up |
| Keyword(4) | compressive stress |
| Keyword(5) | structural relaxation |
| 1st Author's Name | K. Morino |
| 1st Author's Affiliation | Department of Electrical Engineering, Hiroshima University() |
| 2nd Author's Name | S. Miyazaki |
| 2nd Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 3rd Author's Name | M. Hirose |
| 3rd Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| Date | 1996/12/5 |
| Paper # | SDM96-147 |
| Volume (vol) | vol.96 |
| Number (no) | 395 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |