| Presentation | 1996/12/5 Photoluminescence of Er doped Si-rich SiO2 films M. Yoshida, Y. Kanzawa, M. Fuji, S. Hayashi, K. Yamamoto, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have prepared SiO_2 films containing Si nanocrystals and h by cosputtering Si,SiO_2 and Er_2O_3. These samples showed photo luminescence (PL) peaks at 1.54eV and 0.81eV which can be attributed to electron-hole recombination in Si nanocrystals and intra-4f transition in Er^<3+>, respectively. As the concentration of Er atoms in the films increased, the PL intensity of Si nanocrystals decreased and that of Er increased. This suggests that the PL of Er is mediated by energy transfer from Si nanocrystals to Er^<3+> |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Er / Si nanocrystal / photoluminescence / energy transfer / cosputtering |
| Paper # | SDM96-146 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Photoluminescence of Er doped Si-rich SiO2 films |
| Sub Title (in English) | |
| Keyword(1) | Er |
| Keyword(2) | Si nanocrystal |
| Keyword(3) | photoluminescence |
| Keyword(4) | energy transfer |
| Keyword(5) | cosputtering |
| 1st Author's Name | M. Yoshida |
| 1st Author's Affiliation | The Graduate School of Science and Technology, Kobe University() |
| 2nd Author's Name | Y. Kanzawa |
| 2nd Author's Affiliation | The Graduate School of Science and Technology, Kobe University |
| 3rd Author's Name | M. Fuji |
| 3rd Author's Affiliation | The Graduate School of Science and Technology, Kobe University |
| 4th Author's Name | S. Hayashi |
| 4th Author's Affiliation | The Graduate School of Science and Technology, Kobe University:Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe Universities |
| 5th Author's Name | K. Yamamoto |
| 5th Author's Affiliation | The Graduate School of Science and Technology, Kobe University:Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe Universities |
| Date | 1996/12/5 |
| Paper # | SDM96-146 |
| Volume (vol) | vol.96 |
| Number (no) | 395 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |