Presentation 1996/12/5
Fine Structure of Metal-Plated Porous Silicon
T. Ooiwa, T. Nagao, M. Okamoto, A. Hatta, T. Ito,
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Abstract(in English) The complicated structure of as prepared porous silicon (PS) is not very stable and its optical properties are subjected to significantly change. For a possible application of PS to optoelectronic devices, therefore, one may require a suitable passivation of the internal surfaces by an electrically conductive material. A candidate for such passivation materials is indium since its oxide is optically transparent and also electrically conductive. In the present study, we have investigated the atomic structure of PS electroplated with In in a plating solution and the growth mode of in atoms mainly using a transmission electron microscope (TEM) and a Rutherford backscattering spectrometry (RBS) apparatus.
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Keyword(in English) porous silicon / electroplating / passivation / structure analysis
Paper # SDM96-145
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Committee SDM
Conference Date 1996/12/5(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fine Structure of Metal-Plated Porous Silicon
Sub Title (in English)
Keyword(1) porous silicon
Keyword(2) electroplating
Keyword(3) passivation
Keyword(4) structure analysis
1st Author's Name T. Ooiwa
1st Author's Affiliation Department of Electrical Engineering, Osaka University()
2nd Author's Name T. Nagao
2nd Author's Affiliation Department of Electrical Engineering, Osaka University
3rd Author's Name M. Okamoto
3rd Author's Affiliation Department of Electrical Engineering, Osaka University
4th Author's Name A. Hatta
4th Author's Affiliation Department of Electrical Engineering, Osaka University
5th Author's Name T. Ito
5th Author's Affiliation Department of Electrical Engineering, Osaka University
Date 1996/12/5
Paper # SDM96-145
Volume (vol) vol.96
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue