Presentation | 1996/12/5 Fine Structure of Metal-Plated Porous Silicon T. Ooiwa, T. Nagao, M. Okamoto, A. Hatta, T. Ito, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The complicated structure of as prepared porous silicon (PS) is not very stable and its optical properties are subjected to significantly change. For a possible application of PS to optoelectronic devices, therefore, one may require a suitable passivation of the internal surfaces by an electrically conductive material. A candidate for such passivation materials is indium since its oxide is optically transparent and also electrically conductive. In the present study, we have investigated the atomic structure of PS electroplated with In in a plating solution and the growth mode of in atoms mainly using a transmission electron microscope (TEM) and a Rutherford backscattering spectrometry (RBS) apparatus. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | porous silicon / electroplating / passivation / structure analysis |
Paper # | SDM96-145 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1996/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fine Structure of Metal-Plated Porous Silicon |
Sub Title (in English) | |
Keyword(1) | porous silicon |
Keyword(2) | electroplating |
Keyword(3) | passivation |
Keyword(4) | structure analysis |
1st Author's Name | T. Ooiwa |
1st Author's Affiliation | Department of Electrical Engineering, Osaka University() |
2nd Author's Name | T. Nagao |
2nd Author's Affiliation | Department of Electrical Engineering, Osaka University |
3rd Author's Name | M. Okamoto |
3rd Author's Affiliation | Department of Electrical Engineering, Osaka University |
4th Author's Name | A. Hatta |
4th Author's Affiliation | Department of Electrical Engineering, Osaka University |
5th Author's Name | T. Ito |
5th Author's Affiliation | Department of Electrical Engineering, Osaka University |
Date | 1996/12/5 |
Paper # | SDM96-145 |
Volume (vol) | vol.96 |
Number (no) | 395 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |