Presentation 1996/12/5
Photoluminescence from Porous Silicon Anodized under Time-Dependent Photo-Irradiation
M. Okamoto, T. Nagao, T. Ooiwa, A. Hatta, T. Ito,
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Abstract(in English) Creation of holes by photo-irradiation in fabricating porous silicon (PS) is one of the most important factors related to strong photoluminescence (PL) in the visible light emission region. We have found great differences in PL spectra when the timing of photo-irradiation is varied during anodization. In this study, PS samples prepared by varying photo-irradiation time in the latter period of anodization were studied on PL spectra intensity and narrowing. The dependences on current density during photo-irradiation and photo-irradiation intensity were also investigated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Porous silicon(PS) / photoluminescence(PL) / photo-irradiation / spectrum naffowing / FWHM
Paper # SDM96-143
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Committee SDM
Conference Date 1996/12/5(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Photoluminescence from Porous Silicon Anodized under Time-Dependent Photo-Irradiation
Sub Title (in English)
Keyword(1) Porous silicon(PS)
Keyword(2) photoluminescence(PL)
Keyword(3) photo-irradiation
Keyword(4) spectrum naffowing
Keyword(5) FWHM
1st Author's Name M. Okamoto
1st Author's Affiliation Department of Electrical Engineering Osaka Univ.()
2nd Author's Name T. Nagao
2nd Author's Affiliation Department of Electrical Engineering Osaka Univ.
3rd Author's Name T. Ooiwa
3rd Author's Affiliation Department of Electrical Engineering Osaka Univ.
4th Author's Name A. Hatta
4th Author's Affiliation Department of Electrical Engineering Osaka Univ.
5th Author's Name T. Ito
5th Author's Affiliation Department of Electrical Engineering Osaka Univ.
Date 1996/12/5
Paper # SDM96-143
Volume (vol) vol.96
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue