Presentation | 1996/12/5 Photoluminescence from Porous Silicon Anodized under Time-Dependent Photo-Irradiation M. Okamoto, T. Nagao, T. Ooiwa, A. Hatta, T. Ito, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Creation of holes by photo-irradiation in fabricating porous silicon (PS) is one of the most important factors related to strong photoluminescence (PL) in the visible light emission region. We have found great differences in PL spectra when the timing of photo-irradiation is varied during anodization. In this study, PS samples prepared by varying photo-irradiation time in the latter period of anodization were studied on PL spectra intensity and narrowing. The dependences on current density during photo-irradiation and photo-irradiation intensity were also investigated. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Porous silicon(PS) / photoluminescence(PL) / photo-irradiation / spectrum naffowing / FWHM |
Paper # | SDM96-143 |
Date of Issue |
Conference Information | |
Committee | SDM |
---|---|
Conference Date | 1996/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Photoluminescence from Porous Silicon Anodized under Time-Dependent Photo-Irradiation |
Sub Title (in English) | |
Keyword(1) | Porous silicon(PS) |
Keyword(2) | photoluminescence(PL) |
Keyword(3) | photo-irradiation |
Keyword(4) | spectrum naffowing |
Keyword(5) | FWHM |
1st Author's Name | M. Okamoto |
1st Author's Affiliation | Department of Electrical Engineering Osaka Univ.() |
2nd Author's Name | T. Nagao |
2nd Author's Affiliation | Department of Electrical Engineering Osaka Univ. |
3rd Author's Name | T. Ooiwa |
3rd Author's Affiliation | Department of Electrical Engineering Osaka Univ. |
4th Author's Name | A. Hatta |
4th Author's Affiliation | Department of Electrical Engineering Osaka Univ. |
5th Author's Name | T. Ito |
5th Author's Affiliation | Department of Electrical Engineering Osaka Univ. |
Date | 1996/12/5 |
Paper # | SDM96-143 |
Volume (vol) | vol.96 |
Number (no) | 395 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |