| Presentation | 1996/12/5 Near-Infrared Photoluminescence from Si Nanocrystals S. Takeoka, Y. Kanzawa, M Fujii, S. Hayashi, K. Yamamoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Photoluminescence (PL) from Si nanocrystals(2.7-5.5nm) embedded in Si0_2 thin films was stud-led. It was found that Si nanocrystals as small as 3-4nm in diameter exhibit a peak in the near infrared region (1.4-1.5eV). As the size decreased, the PL peak shifted to higher energies and its intensity increased. The temperature dependence of the peak energy was found to be very similar to that of the bulk Si crystal. These suggest that the PL peak arises from the recombination of electrons and holes in Si nanocrystals. At low temperature (<150K), another peak probably associated with the defects at Si-SiO_2 interface was observed at about 0.9eV. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si nanocrystals / PL / near-infrared / temperature dependence / quantum size effect / defect level |
| Paper # | SDM96-142 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Near-Infrared Photoluminescence from Si Nanocrystals |
| Sub Title (in English) | |
| Keyword(1) | Si nanocrystals |
| Keyword(2) | PL |
| Keyword(3) | near-infrared |
| Keyword(4) | temperature dependence |
| Keyword(5) | quantum size effect |
| Keyword(6) | defect level |
| 1st Author's Name | S. Takeoka |
| 1st Author's Affiliation | The Graduate School of Science and Technology, Kobe University() |
| 2nd Author's Name | Y. Kanzawa |
| 2nd Author's Affiliation | The Graduate School of Science and Technology, Kobe University |
| 3rd Author's Name | M Fujii |
| 3rd Author's Affiliation | The Graduate School of Science and Technology, Kobe University |
| 4th Author's Name | S. Hayashi |
| 4th Author's Affiliation | Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University |
| 5th Author's Name | K. Yamamoto |
| 5th Author's Affiliation | Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University |
| Date | 1996/12/5 |
| Paper # | SDM96-142 |
| Volume (vol) | vol.96 |
| Number (no) | 395 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |