| Presentation | 1996/11/15 Fully Self-aligned Metalization MOSFET using selective AI CVD technology A. Gotoh, H. Matsuhashi, R. Tajima, Y. Yokoyama, K. Masu, K. Tsubouchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Parasitic resistance of Gate/Source/Drain regions degrade the device performance of deep-submicron MOSFET circuits. We have proposed Fully Self-Aligned Metalization (FSAM) MOSFET using selective AI-CVD technology. The features are (1) low TiSi_2/Si contact resistance, (2) AI and TiSi_2 diffusion barrier layer and (3) selective CVD AI layer for low sheet resistance. In this work, we report the self-aligned barrier layer formation using low temperature N_2 plasma nitridation on TiSi_2 surface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FSAMMOSFET / selective AI-CVD / barrier layer / N_2 plasma nitridation |
| Paper # | SDM96-135 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/11/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fully Self-aligned Metalization MOSFET using selective AI CVD technology |
| Sub Title (in English) | |
| Keyword(1) | FSAMMOSFET |
| Keyword(2) | selective AI-CVD |
| Keyword(3) | barrier layer |
| Keyword(4) | N_2 plasma nitridation |
| 1st Author's Name | A. Gotoh |
| 1st Author's Affiliation | Reseach Institute of Electrical Communication, Tohoku university() |
| 2nd Author's Name | H. Matsuhashi |
| 2nd Author's Affiliation | Reseach Institute of Electrical Communication, Tohoku university |
| 3rd Author's Name | R. Tajima |
| 3rd Author's Affiliation | Reseach Institute of Electrical Communication, Tohoku university |
| 4th Author's Name | Y. Yokoyama |
| 4th Author's Affiliation | Reseach Institute of Electrical Communication, Tohoku university |
| 5th Author's Name | K. Masu |
| 5th Author's Affiliation | Reseach Institute of Electrical Communication, Tohoku university |
| 6th Author's Name | K. Tsubouchi |
| 6th Author's Affiliation | Reseach Institute of Electrical Communication, Tohoku university |
| Date | 1996/11/15 |
| Paper # | SDM96-135 |
| Volume (vol) | vol.96 |
| Number (no) | 360 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |