| Presentation | 1997/3/13 Anneahng Effect on Resistivity of Germanium Ion Implanted Polycrystalline Silicon Films Keiji Wada, Hiroshi Ydmamoto, Hiroshi Kuwano, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Solid-phase-recrystallized poly-Si films by Ge ion implantation have larger grain size than those by Si ion implantation. The pn-diodes fabricated in Ge implanted poly-Si films have lower leakage current and higher on/off current ratio than those in Si implanted poly-Si films. It is found that the resistivity in the non doped and low doped films is drastically decreased after annealing at temperature above 950℃, and that the conductivity is changed into n-type from p-type. These phenomena occur remarkably with increasing doses of Ge. A few experiments are carried out to investigate the cause of these phenomena. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ge ion implantation / Poly-Si / Solid-phase recrystallization / Anneal / Non dope |
| Paper # | SDM96-226 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/3/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Anneahng Effect on Resistivity of Germanium Ion Implanted Polycrystalline Silicon Films |
| Sub Title (in English) | |
| Keyword(1) | Ge ion implantation |
| Keyword(2) | Poly-Si |
| Keyword(3) | Solid-phase recrystallization |
| Keyword(4) | Anneal |
| Keyword(5) | Non dope |
| 1st Author's Name | Keiji Wada |
| 1st Author's Affiliation | Faculty of Science & Technology, Keio University() |
| 2nd Author's Name | Hiroshi Ydmamoto |
| 2nd Author's Affiliation | Faculty of Science & Technology, Keio University |
| 3rd Author's Name | Hiroshi Kuwano |
| 3rd Author's Affiliation | Faculty of Science & Technology, Keio University |
| Date | 1997/3/13 |
| Paper # | SDM96-226 |
| Volume (vol) | vol.96 |
| Number (no) | 570 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |