| Presentation | 1997/3/13 Suppression of the parasitic MOSFETs in SOI substrates by hydrogenation process T. Iwamatsu, T. Ipposhi, S. Miyamoto, Y. Yamaguchi, S. Maegawa, Y. Inoue, T. Nishimura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It was found that a hydrogenation process was a effective way to suppress the threshold voltage lowering of the parasitic MOSFETs in SOI MOSFETs. The charge in the oxide at the LOCOS edge region can be separated for two types of charges: One (Qf(LOCOS)) may be induced during the transistor process in the edge region, and the other (Qf(BOX)) may originally exist in SOI/buried oxide interfaces. The threshold voltage of the parasitic MOSFET was reduced by both Qf(LOCOS)and Qf(BOX). Qf(LOCOS) was reduced by hydrogenation, but Qf(BOX) was not reduced. Moreover, the value of Qf(BOX) varied depending on the SOI substrates used. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Thin-Film SOI / LOCOS / parasitic MOSFETs / hydrogenation |
| Paper # | SDM96-224 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/3/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Suppression of the parasitic MOSFETs in SOI substrates by hydrogenation process |
| Sub Title (in English) | |
| Keyword(1) | Thin-Film SOI |
| Keyword(2) | LOCOS |
| Keyword(3) | parasitic MOSFETs |
| Keyword(4) | hydrogenation |
| 1st Author's Name | T. Iwamatsu |
| 1st Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corporation() |
| 2nd Author's Name | T. Ipposhi |
| 2nd Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corporation |
| 3rd Author's Name | S. Miyamoto |
| 3rd Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corporation |
| 4th Author's Name | Y. Yamaguchi |
| 4th Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corporation |
| 5th Author's Name | S. Maegawa |
| 5th Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corporation |
| 6th Author's Name | Y. Inoue |
| 6th Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corporation |
| 7th Author's Name | T. Nishimura |
| 7th Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corporation |
| Date | 1997/3/13 |
| Paper # | SDM96-224 |
| Volume (vol) | vol.96 |
| Number (no) | 570 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |