| Presentation | 1998/1/23 Highly Reliable SiOF Film Formation by HDP-CVD Using Fluorosilanes T. Fukuda, T. Hosokawa, E. Sasaki, N. Kobayashi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Highly stable SiOF films that have a low ε and fewer O-H bonds and higher permeability tolerance than P-TEOS are formed using a conventional apparatus. Films were produced using processes that generate hydrogen species. One, a SiF_2H_2 process which generates a very stable precursor, SiF_2, produces very stable SiOF with ε=3.3. The other, amixing process of SiF_4 and SiH_4, gives very stable SiOF (ε=3.6) at a low cost. Both processes were successfully applied to the intermetal dielectrics of a 0.35mm device without causing electrical degradation in the MOS characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CVD / SiOF / low-k / SiF_2H_2 / SiF_4 / hygroscopy / permeability |
| Paper # | SDM97-180 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/1/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly Reliable SiOF Film Formation by HDP-CVD Using Fluorosilanes |
| Sub Title (in English) | |
| Keyword(1) | CVD |
| Keyword(2) | SiOF |
| Keyword(3) | low-k |
| Keyword(4) | SiF_2H_2 |
| Keyword(5) | SiF_4 |
| Keyword(6) | hygroscopy |
| Keyword(7) | permeability |
| 1st Author's Name | T. Fukuda |
| 1st Author's Affiliation | Semiconductor Technology Development Center, Semiconductor & Integrated Circuits Div., Hitachi Ltd.() |
| 2nd Author's Name | T. Hosokawa |
| 2nd Author's Affiliation | Semiconductor Technology Development Center, Semiconductor & Integrated Circuits Div., Hitachi Ltd. |
| 3rd Author's Name | E. Sasaki |
| 3rd Author's Affiliation | Hitachi ULSI Engineering Corporation |
| 4th Author's Name | N. Kobayashi |
| 4th Author's Affiliation | Semiconductor Technology Development Center, Semiconductor & Integrated Circuits Div., Hitachi Ltd. |
| Date | 1998/1/23 |
| Paper # | SDM97-180 |
| Volume (vol) | vol.97 |
| Number (no) | 508 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |