Presentation | 1997/11/21 Proximity Effect Correction for Block Exposure System T. Nagata, Y. Manabe, Y. Nara, Y. Machida, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In order to obtain highly accurate patterns for 0.13μm design rule and below by electron beam exposure system with high throughput, it is necessary to use block exposure system and to suppress proximity effect. We have developed proximity effect correction system for block exposure system using supplementary exposure method. By using this system, line width difference for pattern area density from 5% to 40% decreased from 70nm to 15nm in 0.13μm line & space patterns. Line width difference between the isolated and dense region also decreased from 70nm to 20nm. Necessity of proximity effect correction considering coulomb interaction effect is also pointed out. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Block Exposure System / Proximity Effect Correction / Supplementary exposure method |
Paper # | SDM97-156 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1997/11/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Proximity Effect Correction for Block Exposure System |
Sub Title (in English) | |
Keyword(1) | Block Exposure System |
Keyword(2) | Proximity Effect Correction |
Keyword(3) | Supplementary exposure method |
1st Author's Name | T. Nagata |
1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
2nd Author's Name | Y. Manabe |
2nd Author's Affiliation | Fujitsu Limited |
3rd Author's Name | Y. Nara |
3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
4th Author's Name | Y. Machida |
4th Author's Affiliation | Fujitsu Limited |
Date | 1997/11/21 |
Paper # | SDM97-156 |
Volume (vol) | vol.97 |
Number (no) | 393 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |