Presentation 1997/11/21
Proximity Effect Correction for Block Exposure System
T. Nagata, Y. Manabe, Y. Nara, Y. Machida,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to obtain highly accurate patterns for 0.13μm design rule and below by electron beam exposure system with high throughput, it is necessary to use block exposure system and to suppress proximity effect. We have developed proximity effect correction system for block exposure system using supplementary exposure method. By using this system, line width difference for pattern area density from 5% to 40% decreased from 70nm to 15nm in 0.13μm line & space patterns. Line width difference between the isolated and dense region also decreased from 70nm to 20nm. Necessity of proximity effect correction considering coulomb interaction effect is also pointed out.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Block Exposure System / Proximity Effect Correction / Supplementary exposure method
Paper # SDM97-156
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Conference Information
Committee SDM
Conference Date 1997/11/21(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Proximity Effect Correction for Block Exposure System
Sub Title (in English)
Keyword(1) Block Exposure System
Keyword(2) Proximity Effect Correction
Keyword(3) Supplementary exposure method
1st Author's Name T. Nagata
1st Author's Affiliation Fujitsu Laboratories Ltd.()
2nd Author's Name Y. Manabe
2nd Author's Affiliation Fujitsu Limited
3rd Author's Name Y. Nara
3rd Author's Affiliation Fujitsu Laboratories Ltd.
4th Author's Name Y. Machida
4th Author's Affiliation Fujitsu Limited
Date 1997/11/21
Paper # SDM97-156
Volume (vol) vol.97
Number (no) 393
Page pp.pp.-
#Pages 8
Date of Issue