| Presentation | 1997/9/25 TCAD Based Statistical Analysis of MOSFET's N. Shigyou, T. Morishita, K. Sugawara, N. Wakita, Y. Asahi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The statistical process fluctuations limit the parametric yield. Thus, the statistical simulation is needed for a robust design of process, device and circuit. This article describes the statistical simulation of MOSFTTs using Technology CAD (TCAD). We obtained BSIM3v3 worst-case models based on process fluctuations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | TCAD / sensitivity analysis / statistical analysis / BSIM3v3 / worst-case model / pdFab |
| Paper # | SDM97-112 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/9/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | TCAD Based Statistical Analysis of MOSFET's |
| Sub Title (in English) | |
| Keyword(1) | TCAD |
| Keyword(2) | sensitivity analysis |
| Keyword(3) | statistical analysis |
| Keyword(4) | BSIM3v3 |
| Keyword(5) | worst-case model |
| Keyword(6) | pdFab |
| 1st Author's Name | N. Shigyou |
| 1st Author's Affiliation | Microelectronics Engineering Laboratory, Toshiba Corporation() |
| 2nd Author's Name | T. Morishita |
| 2nd Author's Affiliation | Toshiba CAE Systems Incorporated |
| 3rd Author's Name | K. Sugawara |
| 3rd Author's Affiliation | Semiconductor Division, Toshiba Corporation |
| 4th Author's Name | N. Wakita |
| 4th Author's Affiliation | Semiconductor DA & Test Center, Toshiba Corporation |
| 5th Author's Name | Y. Asahi |
| 5th Author's Affiliation | Semiconductor Division, Toshiba Corporation |
| Date | 1997/9/25 |
| Paper # | SDM97-112 |
| Volume (vol) | vol.97 |
| Number (no) | 272 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |