| Presentation | 1997/9/25 Accurate modeling of nMOSFET inversion layer mobility by an empirical method for local field model Takuji TANAKA, Seiichiro YAMAGUCHI, Hiroyuki KANATA, Hiroshi GOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a new model for the inversion layer mobility of nMOSFET based on the local field model which gives more accurate dependence of the mobility on effective normal electric field. Conventional local field models (e.g.Lombardi et al.) cannot precisely reproduce the universal curve in the middle and high field regions. In order to overcome this problem, we have empirically changed index numbers of a local normal field in a Mattiessen-rule like equation. Our model gives us an accurate universal curve in the wide range of the field, since the model effectively includes complex relation between local and effective mobility-field relations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / inversion layer mobility / effective normal electric field / universal curve / local field model / device simulation |
| Paper # | SDM97-107 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/9/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Accurate modeling of nMOSFET inversion layer mobility by an empirical method for local field model |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | inversion layer mobility |
| Keyword(3) | effective normal electric field |
| Keyword(4) | universal curve |
| Keyword(5) | local field model |
| Keyword(6) | device simulation |
| 1st Author's Name | Takuji TANAKA |
| 1st Author's Affiliation | Fujitsu Ltd., Advanced Process Integration Dept.() |
| 2nd Author's Name | Seiichiro YAMAGUCHI |
| 2nd Author's Affiliation | Fujitsu Ltd., Advanced Process Integration Dept. |
| 3rd Author's Name | Hiroyuki KANATA |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd., ULSI Process Lab. |
| 4th Author's Name | Hiroshi GOTO |
| 4th Author's Affiliation | Fujitsu Ltd., Advanced Process Integration Dept. |
| Date | 1997/9/25 |
| Paper # | SDM97-107 |
| Volume (vol) | vol.97 |
| Number (no) | 272 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |