| Presentation | 1997/9/25 An Implementation of Transient Enhanced Diffusion Model into the FEM-based 2-D Process Simulator FFEAST N. Sugiyasu, K. Suzuki, S. Kojima, Y. Ohyama, H. Goto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have proposed a coupled and de-coupled combined method to solve the PDE for a transient enhanced diffusion model. In the case of a boron diffusion process, the sum of interstitial Si and impurity-interstitial pair concentration, the sum of vacancy and impurity-vacancy pair concentration, and each chemivcal impurity concentration are kept constant and the charge neutrality law is applied. This procedure has realized a robust solution system which is implemented to the FEM-based 2-D process simulator FFEAST, and transient enhanced diffusion simulation for a sub-quarter micron nMOSFET has been demonstrated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Peocess Simulation / Transient Enhanced Diffusion / Solution |
| Paper # | SDM97-106 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/9/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | An Implementation of Transient Enhanced Diffusion Model into the FEM-based 2-D Process Simulator FFEAST |
| Sub Title (in English) | |
| Keyword(1) | Peocess Simulation |
| Keyword(2) | Transient Enhanced Diffusion |
| Keyword(3) | Solution |
| 1st Author's Name | N. Sugiyasu |
| 1st Author's Affiliation | Technblogy Development Divion, Fujitsu Limited() |
| 2nd Author's Name | K. Suzuki |
| 2nd Author's Affiliation | Technblogy Development Divion, Fujitsu Limited |
| 3rd Author's Name | S. Kojima |
| 3rd Author's Affiliation | Technblogy Development Divion, Fujitsu Limited |
| 4th Author's Name | Y. Ohyama |
| 4th Author's Affiliation | Technblogy Development Divion, Fujitsu Limited |
| 5th Author's Name | H. Goto |
| 5th Author's Affiliation | Technblogy Development Divion, Fujitsu Limited |
| Date | 1997/9/25 |
| Paper # | SDM97-106 |
| Volume (vol) | vol.97 |
| Number (no) | 272 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |