Presentation 1997/8/26
A study of memory cell for high density DRAM
Yoshitaka Tadaki, Toshihiro Sekiguchi, Jun Murata, Masaya Muranaka, Masashi Miura, Kazuya Makabe, Toshiyuki Kaeriyama, Songsu Cho, Katsuo Yuhara,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Achieved high density DRAM adopting Gull-wing shape memory cell layout for active layer. Evaluation of isolation characteristics at electrically severe condition shows COPs cause isolation failures. Failure model is COP cause thinning of the oxide thickness of LOCOS.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DRAM / COP / LOCOS / Isolation
Paper # SDM97-98
Date of Issue

Conference Information
Committee SDM
Conference Date 1997/8/26(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A study of memory cell for high density DRAM
Sub Title (in English)
Keyword(1) DRAM
Keyword(2) COP
Keyword(3) LOCOS
Keyword(4) Isolation
1st Author's Name Yoshitaka Tadaki
1st Author's Affiliation Hitachi, Devive development center()
2nd Author's Name Toshihiro Sekiguchi
2nd Author's Affiliation Hitachi, Devive development center
3rd Author's Name Jun Murata
3rd Author's Affiliation Hitachi, Devive development center
4th Author's Name Masaya Muranaka
4th Author's Affiliation Hitachi VLSI engineering
5th Author's Name Masashi Miura
5th Author's Affiliation Hitachi VLSI engineering
6th Author's Name Kazuya Makabe
6th Author's Affiliation Hitachi VLSI engineering
7th Author's Name Toshiyuki Kaeriyama
7th Author's Affiliation Texas Instruments Japan
8th Author's Name Songsu Cho
8th Author's Affiliation Texas Instruments Japan
9th Author's Name Katsuo Yuhara
9th Author's Affiliation Texas Instruments Japan
Date 1997/8/26
Paper # SDM97-98
Volume (vol) vol.97
Number (no) 240
Page pp.pp.-
#Pages 5
Date of Issue