Presentation 1997/8/25
Chemistry of Si surface in water : Oxidaion and hydrogen exchange
Michio Niwano, Shin-ich Tadokoro, Nobuo Miyamoto,
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Abstract(in English) The chemical state of a hydrogen-terminated Si(100) surface during storage in water (H_2O) and heavy water (D_2O), has been investigated "in-situ" using infrared spectroscopy in the multiple internal reflection geometry. We have examined how infrared absorption spectra in the Si-H stretch vibration region change while the Si surface is immersed into H_2O and D_2O. We demonstrate that hydrogen exchange reaction takes place on the H-terminated Si surface during storage in water. It is also shown that for a long-term storage in water the hydrogen-terminated surface is oxidized to form intermediate oxidation states. Chemical processes involved in oxidation and etching are discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Si / Surface in water / Oxidation / Hydrogen exchange / IR spectroscopy / In-situ monitoring
Paper # SDM97-86
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Conference Information
Committee SDM
Conference Date 1997/8/25(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Chemistry of Si surface in water : Oxidaion and hydrogen exchange
Sub Title (in English)
Keyword(1) Si
Keyword(2) Surface in water
Keyword(3) Oxidation
Keyword(4) Hydrogen exchange
Keyword(5) IR spectroscopy
Keyword(6) In-situ monitoring
1st Author's Name Michio Niwano
1st Author's Affiliation Research Institute of Electrical Communication, Tohoku University()
2nd Author's Name Shin-ich Tadokoro
2nd Author's Affiliation Faculty of Engineering, Tohoku-Gakuin University
3rd Author's Name Nobuo Miyamoto
3rd Author's Affiliation Faculty of Engineering, Tohoku-Gakuin University
Date 1997/8/25
Paper # SDM97-86
Volume (vol) vol.97
Number (no) 239
Page pp.pp.-
#Pages 7
Date of Issue