Presentation | 1997/6/20 A Wide-Dynamic-Range High-Transimpedance Si Bipolar Preamplifier IC for 10-Gb/s Optical Fiber Links Toru Masuda, Ken-ichi Ohhata, Kazuo Imai, Ryoji Takeyari, Katsuyoshi Washio, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A wide dynamic range and high transimpedance Si bipolar preamplifier IC for 10-Gb/s short-haul optical fiber links is described. A limiting amplifier was introduced after the transimpedance stage to overcome the trade-off between high transimpedance and a wide dynamic range. This concept allows high sensitivity wide dynamic range optical receiver without a fiber amplifier. A high transimpedance of 1 kΩ and a wide input current dynamic range from 16μApp up to 2.5 mApp were achieved with a bandwidth of 10.5 GHz, and an equivalent input noise current density of 12 pA/√Hz, using 0.3μm Si bipolar technology. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Sibipolar / Optical communications / Short-haul system / Preamplifier / Transimpedance / Input dynamic range |
Paper # | ED97-58 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1997/6/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Wide-Dynamic-Range High-Transimpedance Si Bipolar Preamplifier IC for 10-Gb/s Optical Fiber Links |
Sub Title (in English) | |
Keyword(1) | Sibipolar |
Keyword(2) | Optical communications |
Keyword(3) | Short-haul system |
Keyword(4) | Preamplifier |
Keyword(5) | Transimpedance |
Keyword(6) | Input dynamic range |
1st Author's Name | Toru Masuda |
1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
2nd Author's Name | Ken-ichi Ohhata |
2nd Author's Affiliation | Device Development Center, Hitachi, Ltd. |
3rd Author's Name | Kazuo Imai |
3rd Author's Affiliation | Musashino Office, Hitachi Device Engineering Co., Ltd. |
4th Author's Name | Ryoji Takeyari |
4th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
5th Author's Name | Katsuyoshi Washio |
5th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
Date | 1997/6/20 |
Paper # | ED97-58 |
Volume (vol) | vol.97 |
Number (no) | 109 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |