| Presentation | 1997/7/25 Application of PECVD-WNx Electrode for Ta_2O_5 Capacitor Byung-Lyul Park, Myoung-Bum Lee, Hyeon-Deok Lee, Ho-Kyu Kang, Moon-Yong Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | PECVD-WNx films have been developed for the upper elatrode of Ta_2O_5 capacitor in ULSI DRAMs. In this paper, the electrical characterization of PECVD-WNx/Poly-Si electrode was performed in a cylinderically shaped structure. Cell capacitance of PECVD-WNx electrode is a little lower than that of TiN electrode, which is probably owing to the reaction between Ta_2O_5 and WNx during subsequent process of high temperature. However, in an aspect of cell leakage current, WNx electrode shows lower value by an order of magnitude than PVD-TiN electrode. This lower leakage current is attributed to the better comformality of PECVD-WNx electrode compared to PVD-TiN, which is confirmed by TEM micrographs. It is demonstrated that PECVD-WNx can be a good upper electrode in complicated Ta_2O_5 capacitor storage nodes of ULSI DRAMs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PECVD-WNx / Ta_2O_5 / Capacitor / Lakage Current / Step Coverage / ULSI DRAM |
| Paper # | SDM97-72 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Application of PECVD-WNx Electrode for Ta_2O_5 Capacitor |
| Sub Title (in English) | |
| Keyword(1) | PECVD-WNx |
| Keyword(2) | Ta_2O_5 |
| Keyword(3) | Capacitor |
| Keyword(4) | Lakage Current |
| Keyword(5) | Step Coverage |
| Keyword(6) | ULSI DRAM |
| 1st Author's Name | Byung-Lyul Park |
| 1st Author's Affiliation | LS Process Development Group, Semiconductor R&D Center, Samsung Electronics Co., LTD.0() |
| 2nd Author's Name | Myoung-Bum Lee |
| 2nd Author's Affiliation | LS Process Development Group, Semiconductor R&D Center, Samsung Electronics Co., LTD. |
| 3rd Author's Name | Hyeon-Deok Lee |
| 3rd Author's Affiliation | LS Process Development Group, Semiconductor R&D Center, Samsung Electronics Co., LTD. |
| 4th Author's Name | Ho-Kyu Kang |
| 4th Author's Affiliation | LS Process Development Group, Semiconductor R&D Center, Samsung Electronics Co., LTD. |
| 5th Author's Name | Moon-Yong Lee |
| 5th Author's Affiliation | LS Process Development Group, Semiconductor R&D Center, Samsung Electronics Co., LTD. |
| Date | 1997/7/25 |
| Paper # | SDM97-72 |
| Volume (vol) | vol.97 |
| Number (no) | 196 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |