Presentation 1997/7/24
A Fast and Accurate Program Method Providing Fully Controllable Threshold Voltage Distributions for Flash Memories
Tae-Sung Jung, Yong-Nam Koh, Heung-Kwun Oh, Kang-Deog Suh,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Various flash memory technologies have evolved with rapidly growing application areas. Several flash cell technologies such as NAND, AND, DiNOR [1] are using Fowler-Nordheim (F-N) tunneling. Improving the program speed while accurately controlling the threshold voltage (V_) distribution is one of key issues, and it becomes crucial for the multi-level cell technology [2] This paper discusses fundamentals and characteristics of a very accurate and fast programming method providing fully controllable V_ distributions for flash memories using F-N tunneling for programming.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Flah / Memory / Program / Distribution
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Committee SDM
Conference Date 1997/7/24(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Fast and Accurate Program Method Providing Fully Controllable Threshold Voltage Distributions for Flash Memories
Sub Title (in English)
Keyword(1) Flah
Keyword(2) Memory
Keyword(3) Program
Keyword(4) Distribution
1st Author's Name Tae-Sung Jung
1st Author's Affiliation Samsung Electronics Co., Ltd. NVM Design()
2nd Author's Name Yong-Nam Koh
2nd Author's Affiliation Samsung Electronics Co., Ltd. NVM Design
3rd Author's Name Heung-Kwun Oh
3rd Author's Affiliation Samsung Electronics Co., Ltd. NVM Design
4th Author's Name Kang-Deog Suh
4th Author's Affiliation Samsung Electronics Co., Ltd. NVM Design
Date 1997/7/24
Paper #
Volume (vol) vol.97
Number (no) 195
Page pp.pp.-
#Pages 6
Date of Issue