| Presentation | 1997/7/24 Statistical Origin of DRAM Data-Retention-Time Distribution A. Hiraiwa, M. Ogasawara, N. Natsuaki, Y. Itoh, H. Iwai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Charges stored in a DRAM memory cell are lost by the SRH current that is generated at carrier traps in a junction space-charge-region (SCR). The SRH current depends on trap levels that are distributed not only among memory cells, but also within a cell. This trap-level distribution causes the temperature-dependent variation in data retention times. The SRH current, on the other hand, is enhanced by an SCR field, and the distribution of the field among cells increases the variation in retention times. From these results we find that reduction of the electric-field distribution, as well as of the average field, is important to improve the data-retention characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DRAM / retention time / SRH / carrier trap / electric field |
| Paper # | SDM97-55 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Statistical Origin of DRAM Data-Retention-Time Distribution |
| Sub Title (in English) | |
| Keyword(1) | DRAM |
| Keyword(2) | retention time |
| Keyword(3) | SRH |
| Keyword(4) | carrier trap |
| Keyword(5) | electric field |
| 1st Author's Name | A. Hiraiwa |
| 1st Author's Affiliation | Semiconductor & Integrated Circuits Div., Hitachi, Ltd.() |
| 2nd Author's Name | M. Ogasawara |
| 2nd Author's Affiliation | Device Development Center, Hitachi, Ltd. |
| 3rd Author's Name | N. Natsuaki |
| 3rd Author's Affiliation | Device Development Center, Hitachi, Ltd. |
| 4th Author's Name | Y. Itoh |
| 4th Author's Affiliation | Device Development Center, Hitachi, Ltd. |
| 5th Author's Name | H. Iwai |
| 5th Author's Affiliation | Device Development Center, Hitachi, Ltd. |
| Date | 1997/7/24 |
| Paper # | SDM97-55 |
| Volume (vol) | vol.97 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |