| Presentation | 1997/7/24 Nitrogen and Phosphorus co-doped Amorphous Silicon as a Floating Gate of Flash Memory Tatsunori Kaneoka, Masatoshi Anma, Hiromi Itoh, Yoshikazu Ohno, Makoto Hirayama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The impact of an in-situ nitrogen and phosphorus co-doped amorphous silicon as a scalable floating gate material for future flash memories is discussed. An oxidation-resistant surface with a homogeneous and smooth texture of the crystallized in-situ nitrogen and phosphorus co-doped amorphous silicon improves the reliability of the interpoly CVD-SiO_2 dielectric remarkably. The tunnel oxide at the edge of the floating gate is immune from the loss of the reliability because little loss of the gate dimension, achieved by the oxidation-resistant feature, secures an enough floating gate area overlapping with the source as designed. The in-situ nitrogen and phosphorus co-doped a-Si is a promising floating gate material that can well function in the scaled-down flash memory. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | flash memory / floating gate / amorphous silicon / nitrogen doping |
| Paper # | SDM97-54 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Nitrogen and Phosphorus co-doped Amorphous Silicon as a Floating Gate of Flash Memory |
| Sub Title (in English) | |
| Keyword(1) | flash memory |
| Keyword(2) | floating gate |
| Keyword(3) | amorphous silicon |
| Keyword(4) | nitrogen doping |
| 1st Author's Name | Tatsunori Kaneoka |
| 1st Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corp.() |
| 2nd Author's Name | Masatoshi Anma |
| 2nd Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corp. |
| 3rd Author's Name | Hiromi Itoh |
| 3rd Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corp. |
| 4th Author's Name | Yoshikazu Ohno |
| 4th Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corp. |
| 5th Author's Name | Makoto Hirayama |
| 5th Author's Affiliation | ULSI Laboratory, Mitsubishi Electric Corp. |
| Date | 1997/7/24 |
| Paper # | SDM97-54 |
| Volume (vol) | vol.97 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |