Presentation 1997/7/24
Semi-empirical Device and Circuit Models for Ferroelectrics
Kyu-Nam Lim, Kyuhyon Kim, Songcheol Hong, Kywro Lee,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Universal model of FerroElectric(FE) polarization switching is presented, which include the effects of time-dependent electric field and arbitrary polarization state. The model can successfully describe the followings with 5 parameters (V_c, V_o, P_s, C_o, T) which have definite physical meanings. These include 1) hysteresis of chage vs. voltage (Q-V) and capacitance vs. voltage (C-V) relation-ships 2) characteristic time dependent polarization reversal(switching) current. To simulate the FE capacitor as a circuit element, the macro(subcircuit) of FE capacitor based on the universal model is implemented into SPICE.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ferroelectric Capacitor / SPICE / CAD model / Hysteresis / Polarization switching
Paper # SDM97-53
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Conference Information
Committee SDM
Conference Date 1997/7/24(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Semi-empirical Device and Circuit Models for Ferroelectrics
Sub Title (in English)
Keyword(1) Ferroelectric Capacitor
Keyword(2) SPICE
Keyword(3) CAD model
Keyword(4) Hysteresis
Keyword(5) Polarization switching
1st Author's Name Kyu-Nam Lim
1st Author's Affiliation Dept. of EE, KAIST()
2nd Author's Name Kyuhyon Kim
2nd Author's Affiliation Dept. of EE, KAIST
3rd Author's Name Songcheol Hong
3rd Author's Affiliation Dept. of EE, KAIST
4th Author's Name Kywro Lee
4th Author's Affiliation Dept. of EE, KAIST
Date 1997/7/24
Paper # SDM97-53
Volume (vol) vol.97
Number (no) 195
Page pp.pp.-
#Pages 6
Date of Issue