| Presentation | 1997/7/24 Characterizations of Ferroelectric Transistors with BaMgF_4 Dielectric Jong-Son Lyu, Jin-Woo Jung, Kwang-Ho Kim, Bo-Woo Kim, Hying Joun Yoo, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The structure and electrical characteristics of metal-ferroelectric-semiconductor FET (MFSFET) for single transistor memory are presented. The MFSFET comprises of polysilicon islands as source/drain electrodes and BaMgF_4 film as a gate dielectric. The polysilicon source/drain were built-up prior to the film formation to suppress a degradation due to high thermal cycle. From the MFS capacitor, the remnant polarization and coercive field were measured to be about 0.6μC/cm^2 and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse possibly due to film cracking or bad adhesion between the film and the Al electrode. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Polysilicon source/drain / BaMgF_4 / Remanent polarization / Ferroelectric switching |
| Paper # | SDM97-52 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 1997/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterizations of Ferroelectric Transistors with BaMgF_4 Dielectric |
| Sub Title (in English) | |
| Keyword(1) | Polysilicon source/drain |
| Keyword(2) | BaMgF_4 |
| Keyword(3) | Remanent polarization |
| Keyword(4) | Ferroelectric switching |
| 1st Author's Name | Jong-Son Lyu |
| 1st Author's Affiliation | Semiconductor Division, ETRI() |
| 2nd Author's Name | Jin-Woo Jung |
| 2nd Author's Affiliation | Semiconductor Division, ETRI |
| 3rd Author's Name | Kwang-Ho Kim |
| 3rd Author's Affiliation | Department of Semiconductor Engineering, Chong-Ju University |
| 4th Author's Name | Bo-Woo Kim |
| 4th Author's Affiliation | Semiconductor Division, ETRI |
| 5th Author's Name | Hying Joun Yoo |
| 5th Author's Affiliation | Semiconductor Division, ETRI |
| Date | 1997/7/24 |
| Paper # | SDM97-52 |
| Volume (vol) | vol.97 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |