| Presentation | 1997/7/24 Effects of Low Resistivity TiN as a Wetting Layer on Submicron Via Contact Filling Process Young Jung Kim, Heon Do Kim, Sang Ho Yu, Jong Choul Kim, Sang Kyoo Lee, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to improve EM immunity, multi-layered metal structures, such as Ti/Al, TiN/Al, and Ti/TiN/Al, have been employed in Al metallization process. Due to the formation of TiAl_3, and AlN between the interfaces, however, the via resistance of the structures showed higher than expected to be used in high-speed devices. In this study, the use of low resistivity TiN was applied to overcome the problem and, as a result, the Al metallization with high thermal stability and low via resistance, showing the reduction of interfacial reaction was successfully achieved. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Via / low resistivity TiN / wetting layer / TiAl_3 / AlN |
| Paper # | SDM97-51 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 1997/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of Low Resistivity TiN as a Wetting Layer on Submicron Via Contact Filling Process |
| Sub Title (in English) | |
| Keyword(1) | Via |
| Keyword(2) | low resistivity TiN |
| Keyword(3) | wetting layer |
| Keyword(4) | TiAl_3 |
| Keyword(5) | AlN |
| 1st Author's Name | Young Jung Kim |
| 1st Author's Affiliation | Memory R&D Division, HYUNDAI Electronics Co.() |
| 2nd Author's Name | Heon Do Kim |
| 2nd Author's Affiliation | Memory R&D Division, HYUNDAI Electronics Co. |
| 3rd Author's Name | Sang Ho Yu |
| 3rd Author's Affiliation | Memory R&D Division, HYUNDAI Electronics Co. |
| 4th Author's Name | Jong Choul Kim |
| 4th Author's Affiliation | Memory R&D Division, HYUNDAI Electronics Co. |
| 5th Author's Name | Sang Kyoo Lee |
| 5th Author's Affiliation | Memory R&D Division, HYUNDAI Electronics Co. |
| Date | 1997/7/24 |
| Paper # | SDM97-51 |
| Volume (vol) | vol.97 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |