| Presentation | 1997/7/24 Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP G.J. Bae, K.H. Lee, K.W. Lee, G. Cha, S.I. Lee, M.Y. Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Patterned and Bonded SOI(PBSOI) structure poses serious challenges in post CMP cleaning process where the mixed patterns of silicon and oxide should be cleaned simultaneously. Because conventional repetitive RCA cleaning which damages the oxide pattern and degrades the surface roughness of silicon pattern is not suitable for PBSOI fabrication process, we introduced in-situ buffing with hydrogen peroxide to post CMP cleaning process for PBSOI wafers. Chemical oxide layer on the surface of silicon pattern is formed by in-situ buffing with hydrogen peroxide and it improves the ability to remove the particles on wafer. Thus, by using hydrogen peroxide, most of the particles induced by selective silicon CMP can be reduced to the acceptable levels(≤0.1ea/cm^2). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PBS0I / post CMP cleaning / hydrogen peroxide / in-situ buffing / selective silicon CMP |
| Paper # | SDM97-50 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP |
| Sub Title (in English) | |
| Keyword(1) | PBS0I |
| Keyword(2) | post CMP cleaning |
| Keyword(3) | hydrogen peroxide |
| Keyword(4) | in-situ buffing |
| Keyword(5) | selective silicon CMP |
| 1st Author's Name | G.J. Bae |
| 1st Author's Affiliation | Semiconductor R&D Center Samsung Electronics Co., Ltd() |
| 2nd Author's Name | K.H. Lee |
| 2nd Author's Affiliation | Semiconductor R&D Center Samsung Electronics Co., Ltd |
| 3rd Author's Name | K.W. Lee |
| 3rd Author's Affiliation | Semiconductor R&D Center Samsung Electronics Co., Ltd |
| 4th Author's Name | G. Cha |
| 4th Author's Affiliation | Semiconductor R&D Center Samsung Electronics Co., Ltd |
| 5th Author's Name | S.I. Lee |
| 5th Author's Affiliation | Semiconductor R&D Center Samsung Electronics Co., Ltd |
| 6th Author's Name | M.Y. Lee |
| 6th Author's Affiliation | Semiconductor R&D Center Samsung Electronics Co., Ltd |
| Date | 1997/7/24 |
| Paper # | SDM97-50 |
| Volume (vol) | vol.97 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |