Presentation 1997/7/24
Characteristics of MOCVD-Cu Films Using Direct Liquid Injection and the Effects of Post-annealing
Chi-Hoon Jun, Youn Tae Kim, Jong Tae Baek, Hyung Joun Yoo,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Copper metalorganic chemical vapor deposition (MOCVD) using a direct liquid injection system for the (hfac)Cu(VTMOS) [1,1,1,5,5,5-hexafluoro-2, 4-pentadionato(vinyltrimethoxysilane)copper(I)] precursor, has been performed onto TiN, p-type <100> Si, and Si_3N_4 substrates. The influences of reaction temperature and the substrate type on the growth rate, the microstructure, and the electrical resistivity of the copper film have been discussed. To clarify the effects of post-annealing on the characteristics of MOCVD-Cu films, rapid thermal processing (RTP) of Cu/TiN/Si structures has been explored. The electrical and the microstructural characteristics of Cu on reactive sputtered TiN have been studied by observing the changes before and after RTP treatment.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Cu MOCVD / direct liquid injection / (hfac)Cu(VTMOS) precursor / post-annealing / RTP
Paper # SDM97-49
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Conference Information
Committee SDM
Conference Date 1997/7/24(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics of MOCVD-Cu Films Using Direct Liquid Injection and the Effects of Post-annealing
Sub Title (in English)
Keyword(1) Cu MOCVD
Keyword(2) direct liquid injection
Keyword(3) (hfac)Cu(VTMOS) precursor
Keyword(4) post-annealing
Keyword(5) RTP
1st Author's Name Chi-Hoon Jun
1st Author's Affiliation Semiconductor Technology Division, ETRI()
2nd Author's Name Youn Tae Kim
2nd Author's Affiliation Semiconductor Technology Division, ETRI
3rd Author's Name Jong Tae Baek
3rd Author's Affiliation Semiconductor Technology Division, ETRI
4th Author's Name Hyung Joun Yoo
4th Author's Affiliation Semiconductor Technology Division, ETRI
Date 1997/7/24
Paper # SDM97-49
Volume (vol) vol.97
Number (no) 195
Page pp.pp.-
#Pages 6
Date of Issue