| Presentation | 1997/7/24 Study On Characteristics of Ge Based ARL for DUV Lithography Yongbeom Kim, Dongwan Kim, Hoyoung Kang, Jootae Moon, Moonyong Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Germanium based ARL (Anti Reflective layer) having high conformality over toppgraphy and removable during resist strip process was developed and its various characteristics were investigated. The ARLs were composed with GeNx and (Ge, Si)Nx and fabricated by reactive RF sputtering. The optical constants of various Ge based materials were measured and the good ARL performance for DUV lithography was obtained. Since the GeNx ss dissolved in water during resist develop process, it can not be used. Therefore, silicon was added to solve this problem. Thin film characteristics of (Ge,Si)Nx compound were analyzed using XRD, XPS, AES, SEM and the ARL characteristic was confirmed by resist patterning. Because the (Ge,Si)Nx material is removable by H_2SO_4 strip, yet most of current inorganic ARL is not, it has advantage for process simplicity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ARL / refractive index / reflection / lithography / CD variation |
| Paper # | SDM97-48 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study On Characteristics of Ge Based ARL for DUV Lithography |
| Sub Title (in English) | |
| Keyword(1) | ARL |
| Keyword(2) | refractive index |
| Keyword(3) | reflection |
| Keyword(4) | lithography |
| Keyword(5) | CD variation |
| 1st Author's Name | Yongbeom Kim |
| 1st Author's Affiliation | Process Development 1, Semiconductor R&D, Samsung Electronics Co. Ltd.() |
| 2nd Author's Name | Dongwan Kim |
| 2nd Author's Affiliation | Process Development 1, Semiconductor R&D, Samsung Electronics Co. Ltd. |
| 3rd Author's Name | Hoyoung Kang |
| 3rd Author's Affiliation | Process Development 1, Semiconductor R&D, Samsung Electronics Co. Ltd. |
| 4th Author's Name | Jootae Moon |
| 4th Author's Affiliation | Process Development 1, Semiconductor R&D, Samsung Electronics Co. Ltd. |
| 5th Author's Name | Moonyong Lee |
| 5th Author's Affiliation | Process Development 1, Semiconductor R&D, Samsung Electronics Co. Ltd. |
| Date | 1997/7/24 |
| Paper # | SDM97-48 |
| Volume (vol) | vol.97 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |