Presentation 1997/7/24
Effects of grain size and crystalline orientation on the TiSi_2 C49-C54 transformation : Mechanism of pre-amorphization implantation effects in the TiSi_2 C49-C54 transformation
Tomoji Nakamura, Hirofumi Tomita, Kazuto Ikeda,
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Abstract(in English) The effects of pre-amorphization implantation (PAI) on the TiSi_2 C49-C54 transformation has been studied. The PAI treatment noticeably decreases the C49 grain size and the smaller C49-grain sample shows faster transformation to C54-TiSi_2. According to the orientational analysis of C49-TiSi_2 grains to the Si(001) substrate, the PAI treatment suppresses the epitaxial growth of C49-TiSi_2 on Si (001) substrate and the poorer orientational alignment of C49-TiSi_2 causes a more rapid transformation to C54-TiSi_2. We believe this suppression of epitaxial alignment is a possible mechanism to understand the effect of the PAI treatment on the C49-C54 transformation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TitaniLlm silicide / TiSi2 / C49 / C54 / Phase transformation / Pre-amorphization
Paper # SDM97-44
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Committee SDM
Conference Date 1997/7/24(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of grain size and crystalline orientation on the TiSi_2 C49-C54 transformation : Mechanism of pre-amorphization implantation effects in the TiSi_2 C49-C54 transformation
Sub Title (in English)
Keyword(1) TitaniLlm silicide
Keyword(2) TiSi2
Keyword(3) C49
Keyword(4) C54
Keyword(5) Phase transformation
Keyword(6) Pre-amorphization
1st Author's Name Tomoji Nakamura
1st Author's Affiliation Fujitsu Laboratories Ltd., Materials & Materials Engineering Labs.()
2nd Author's Name Hirofumi Tomita
2nd Author's Affiliation Fujitsu Laboratories Ltd., Materials & Materials Engineering Labs.
3rd Author's Name Kazuto Ikeda
3rd Author's Affiliation Fujitsu Laboratories Ltd., Materials & Materials Engineering Labs.
Date 1997/7/24
Paper # SDM97-44
Volume (vol) vol.97
Number (no) 195
Page pp.pp.-
#Pages 6
Date of Issue