| Presentation | 1997/7/24 The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application Hong-Jae Shin, Sung-Jin Kim, Ji-Hyun Choi, Byung-Kun Hwang, Ho-Kyu Kang, Moon-Yong Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The fluorine-doped silicon oxide (SiOF) as a low dielectric material is formed by high density plasma (HDP) chemical vapor deposition (CVD) method using SiH4, SiF4, O2 and Ar as source gases. We studied the reaction mechanism of HDP-SiOF film formation, and evaluated the gap-fill characteristics and parasitic capacitance between metal lines for inter-metal dielectric (IMD) application. SiF4 gas is not only source of Si-F bond in SiOF film but also have in-situ chemically etching characteristics. In case of insufficient amount of O_2 flux, the unstable Si-F_2 bonds were formed in the HDP-SiOF film. The dielectric constant of HDP-SiOF film could be reduced by 23% compared to fhat of PE-TEOS oxide film. Using HDP-SiOF film as gap-filling material in IMD, the gap was completely filled at the aspec ratio below 2.0 and the parasitic capacitance between metal lines could be reduced by 15% compared to that of USG process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiOF / HDP-CVD / low dielectric film / planarization / IMD / Logic |
| Paper # | SDM97-43 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application |
| Sub Title (in English) | |
| Keyword(1) | SiOF |
| Keyword(2) | HDP-CVD |
| Keyword(3) | low dielectric film |
| Keyword(4) | planarization |
| Keyword(5) | IMD |
| Keyword(6) | Logic |
| 1st Author's Name | Hong-Jae Shin |
| 1st Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co., LTD.() |
| 2nd Author's Name | Sung-Jin Kim |
| 2nd Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co., LTD. |
| 3rd Author's Name | Ji-Hyun Choi |
| 3rd Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co., LTD. |
| 4th Author's Name | Byung-Kun Hwang |
| 4th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co., LTD. |
| 5th Author's Name | Ho-Kyu Kang |
| 5th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co., LTD. |
| 6th Author's Name | Moon-Yong Lee |
| 6th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co., LTD. |
| Date | 1997/7/24 |
| Paper # | SDM97-43 |
| Volume (vol) | vol.97 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |