Presentation | 1997/5/23 Formation and Structural Control of Diamond Film by Pulsed Discharge Plasma CVD Mikio NODA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | When the diamond films were prepared by DC plasma CVD, their crystalline quality (CQ) could be controlled by means of pulsation of the discharge. The CQ could be superior by increasing the pulse repetition period and decreasing the duty ratio. Formation of the current peak at the beginning of the discharge (BD) and increase of the non-discharge time (Tn) after the discharge were also effective for improving CQ. These results suggest that the improvement of CQ is results in both the formation of electrons of very high temperature at BD and the etching of non-diamond components during Tn. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | plasma CVD / diamond film / pulsed discharge / crystalline quality repetition period / duty ratio |
Paper # | SDM97-15 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1997/5/23(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Formation and Structural Control of Diamond Film by Pulsed Discharge Plasma CVD |
Sub Title (in English) | |
Keyword(1) | plasma CVD |
Keyword(2) | diamond film |
Keyword(3) | pulsed discharge |
Keyword(4) | crystalline quality repetition period |
Keyword(5) | duty ratio |
1st Author's Name | Mikio NODA |
1st Author's Affiliation | Integrated Natural Sciences, Aichi University of Education() |
Date | 1997/5/23 |
Paper # | SDM97-15 |
Volume (vol) | vol.97 |
Number (no) | 68 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |