| Presentation | 1997/4/24 Quantum Levels in InAs Self-Assembled Quantum Dots Estimated by Capacitance-Voltage Measurement N. Horiguchi, T. Futatsugi, Y. Nakata, N. Yokoyama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We estimated the quantum levels in InAs self-assembled quantum dots by capacitance-voltage measurement. The quantum level of electron was estimated to be at 120 meV below the conduction band edge of GaAs. The quantum level of hole was estimated to be at 180 meV above the valence band edge of GaAs. The tunneling time constant between InAs dots and a doped layer was estimated from the frequency dependence of the capacitance peak due to quantum levels of InAs dots. The time constant of electron was estimated to be 4 to 5 orders smaller than that of hole. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InAs self-assembled quantum dot / quantum level / capacitance-voltage measurement / tunneling time constant |
| Paper # | ED97-8,SDM97-8 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/4/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quantum Levels in InAs Self-Assembled Quantum Dots Estimated by Capacitance-Voltage Measurement |
| Sub Title (in English) | |
| Keyword(1) | InAs self-assembled quantum dot |
| Keyword(2) | quantum level |
| Keyword(3) | capacitance-voltage measurement |
| Keyword(4) | tunneling time constant |
| 1st Author's Name | N. Horiguchi |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | T. Futatsugi |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Y. Nakata |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | N. Yokoyama |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 1997/4/24 |
| Paper # | ED97-8,SDM97-8 |
| Volume (vol) | vol.97 |
| Number (no) | 23 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |