| Presentation | 1998/9/17 Growth of ZnO Thin Films on Sapphire Substrates by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy Hee-Bog KANG, Sung-Hwan LIM, Kiyoshi NAKAMURA, Daisuke SHINDO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we describe the growth and characterization of high-quality ZnO heteroepitaxial films on(0001)sapphire substrates using electron cyclotron resonance-assisted molecular beam epitaxy(ECR-assisted MBE). The quality of these films was analyzed by means of X-ray diffraction, reflection high energy electron diffraction(RHEED), atomic force microscopy(AFM), and plan-view and cross-sectional transmission electron microscopy(TEM). The ECR-assisted MBE was found to be capable of growing high-quality ZnO epitaxial films at low temperatures in comparison with chemical vapor deposition(CVD) and RF sputtering. TEM observations revealed that the interface between ZnO and sapphire was atomically flat without any chemical reaction layer. The threading dislocation formed at the interface of ZnO and sapphire was retained in the ZnO films along the growth direction of the films, and its density was 1.9×10^<11>cm^<-2>. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ZnO / epitaxy / ECR-assisted MBE / TEM |
| Paper # | US98-48 |
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| Committee | US |
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| Conference Date | 1998/9/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Ultrasonics (US) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of ZnO Thin Films on Sapphire Substrates by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | ZnO |
| Keyword(2) | epitaxy |
| Keyword(3) | ECR-assisted MBE |
| Keyword(4) | TEM |
| 1st Author's Name | Hee-Bog KANG |
| 1st Author's Affiliation | Department of Electrical and Communications, Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Sung-Hwan LIM |
| 2nd Author's Affiliation | Institute for Advanced Materials Processing, Tohoku University |
| 3rd Author's Name | Kiyoshi NAKAMURA |
| 3rd Author's Affiliation | Department of Electrical and Communications, Graduate School of Engineering, Tohoku University |
| 4th Author's Name | Daisuke SHINDO |
| 4th Author's Affiliation | Institute for Advanced Materials Processing, Tohoku University |
| Date | 1998/9/17 |
| Paper # | US98-48 |
| Volume (vol) | vol.98 |
| Number (no) | 270 |
| Page | pp.pp.- |
| #Pages | 6 |
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