Presentation | 2001/10/6 Fabrication and property of YBa_2Cu_3O_<7-δ>/Bi_2Sr_2CaCu_2O_<8+δ> ramp-edge type hetero junction Tomoyuki KAWAI, Takuya IMAIZUMI, Tetsuji UCHIYAMA, Ienari IGUCHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | It has never been informed of the fabrication of ramp-edge type junction using different kind of HTSC electrodes like YBa_2Cu_3O_<7-δ>(YBCO) and Bi_2Sr_2CaCu_2O_<8+δ>(BSCCO) and so on. So we tried to fabricate ramp-edge type hetero junction adopted YBCO and BSCCO as electrodes. Every thin film was prepared by pulsed laser ablation method. Since junctions were fabricated through some processes under the adapted condition, we can find that junctions have two kinds of property. One is quasiparticle tunneling, and the other is Josephson tunneling. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | YBa_2Cu_3O_<7-δ> / Bi_2Sr_2CaCu_2O_<8+δ> / ramp-edge type junction / quasiparticle tunneling / flux flow / Shapiro step |
Paper # | SCE2001-30 |
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Conference Information | |
Committee | SCE |
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Conference Date | 2001/10/6(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication and property of YBa_2Cu_3O_<7-δ>/Bi_2Sr_2CaCu_2O_<8+δ> ramp-edge type hetero junction |
Sub Title (in English) | |
Keyword(1) | YBa_2Cu_3O_<7-δ> |
Keyword(2) | Bi_2Sr_2CaCu_2O_<8+δ> |
Keyword(3) | ramp-edge type junction |
Keyword(4) | quasiparticle tunneling |
Keyword(5) | flux flow |
Keyword(6) | Shapiro step |
1st Author's Name | Tomoyuki KAWAI |
1st Author's Affiliation | Department of Physics, Tokyo Institute of Technology() |
2nd Author's Name | Takuya IMAIZUMI |
2nd Author's Affiliation | Department of Physics, Tokyo Institute of Technology |
3rd Author's Name | Tetsuji UCHIYAMA |
3rd Author's Affiliation | Department of Physics, Tokyo Institute of Technology |
4th Author's Name | Ienari IGUCHI |
4th Author's Affiliation | Department of Physics, Tokyo Institute of Technology |
Date | 2001/10/6 |
Paper # | SCE2001-30 |
Volume (vol) | vol.101 |
Number (no) | 348 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |