Presentation 2001/7/7
Epitaxial growth of Nb and Ta layers by high-vacuum EB evaporation
S. Morohashi, R. Imura, N. Sano, M. Suzuta,
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Abstract(in English) It is important to raise the tunneling efficiency of quasiparticles generated by incident X-ray or photon for the operation of superconducting tunneling junction as the detector. Using the electron beam evaporation technique under the high-vacuum pressure of 4 x 10^<-9> Pa, we fabricate epitaxial Nb and Ta layers on a sapphire substrate at the substrate temperature of 500~700 ℃. Nb layer indicates the transition temperature(Tc)of ~9.3 K and the residual resistance ratio(RRR)of ~50. Ta layers indicates Tc~4.5 K and RRR of 45~140.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) High-vacuum EB evaporation / Superconducting tunneling junction / Epitaxial growth of Nb abd Ta layers
Paper # SCE2001-20
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Committee SCE
Conference Date 2001/7/7(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Epitaxial growth of Nb and Ta layers by high-vacuum EB evaporation
Sub Title (in English)
Keyword(1) High-vacuum EB evaporation
Keyword(2) Superconducting tunneling junction
Keyword(3) Epitaxial growth of Nb abd Ta layers
1st Author's Name S. Morohashi
1st Author's Affiliation Department of Advanced Materials Sciences and Engineering, Faculty of Engineering Yamaguchi University()
2nd Author's Name R. Imura
2nd Author's Affiliation Department of Advanced Materials Sciences and Engineering, Faculty of Engineering Yamaguchi University
3rd Author's Name N. Sano
3rd Author's Affiliation Department of Advanced Materials Sciences and Engineering, Faculty of Engineering Yamaguchi University
4th Author's Name M. Suzuta
4th Author's Affiliation Department of Advanced Materials Sciences and Engineering, Faculty of Engineering Yamaguchi University
Date 2001/7/7
Paper # SCE2001-20
Volume (vol) vol.101
Number (no) 183
Page pp.pp.-
#Pages 6
Date of Issue