Presentation 2000/8/22
SCE2000-12 / MW2000-76 Epitaxial NbN/MgO/NbN Multilayers using Reactive DC-sputtering Technique
Akira Kawakami, Zhen Wang, Shigehito Miki,
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Abstract(in English) For THz applications, we have developed a process to grow epitaxial NbN/MgO/NbN trilayers using reactive dc-sputtering technique. NbN films were deposited by reactive dc-sputtering using a Nb target. MgO films are also deposited by reactive dc-sputtering using a Mg target. Between the under-NbN layer and the MgO layer, a thin MgO layer (1.3 nm) was deposited by rf-sputtering as a buffer layer. However, MgO inter-layer thickness was changed up to 240 nm, T_c and 20K-resistivity of NbN top-layers (180 nm) showed no remarkable dependency and they were 15.7 K and about 60 μΩcm. NbN/MgO/NbN SIS junction was also fabricated using the epitaxial technique and it showed high current density (J_c=2.6kA/cm~2), large gap voltage (V_g=5.8mV), and small subgap leakage currents V_=55mV).(
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NbN/MgO/NbN / Epitaxial / Reactive DC-sputtering / Mg target / SIS
Paper # SCE2000-12,MW2000-76
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Conference Information
Committee SCE
Conference Date 2000/8/22(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) SCE2000-12 / MW2000-76 Epitaxial NbN/MgO/NbN Multilayers using Reactive DC-sputtering Technique
Sub Title (in English)
Keyword(1) NbN/MgO/NbN
Keyword(2) Epitaxial
Keyword(3) Reactive DC-sputtering
Keyword(4) Mg target
Keyword(5) SIS
1st Author's Name Akira Kawakami
1st Author's Affiliation Kansai Advanced Research Center, Communications Research Laboratory()
2nd Author's Name Zhen Wang
2nd Author's Affiliation Kansai Advanced Research Center, Communications Research Laboratory
3rd Author's Name Shigehito Miki
3rd Author's Affiliation Kobe University
Date 2000/8/22
Paper # SCE2000-12,MW2000-76
Volume (vol) vol.100
Number (no) 274
Page pp.pp.-
#Pages 8
Date of Issue