Presentation 2000/1/26
Fabrication of a GaAs/YBCO layered structure and its optical response
Toshihiko Kiwa, Kouichi Nakayama, Masayoshi Tonouchi, Masanori Hangyo,
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Abstract(in English) Low temperature grown GaAs(LT-GaAs) thin films were fabricated on MgO substrates and YBa_2Cu_3O_<7-δ> thin films using by pulsed laser deposition (PLD). We examined the optical properties of LT-GaAs films by the time domain reflectivity change method and the properties of LT-GaAs photoconductive switches by terahertz beam excitation. These results suggest that LT-GaAs thin films fabricated by PLD are one of the attractive materials for opto-electronic devices, combining with high T_c superconductors.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) LT-GaAs / YBCO / PLD / Optical devices / THz radiation / Time domain reflectivity change
Paper # SCE99-42
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Committee SCE
Conference Date 2000/1/26(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of a GaAs/YBCO layered structure and its optical response
Sub Title (in English)
Keyword(1) LT-GaAs
Keyword(2) YBCO
Keyword(3) PLD
Keyword(4) Optical devices
Keyword(5) THz radiation
Keyword(6) Time domain reflectivity change
1st Author's Name Toshihiko Kiwa
1st Author's Affiliation Research Center for Superconducting Materials and Electronics, Osaka University()
2nd Author's Name Kouichi Nakayama
2nd Author's Affiliation Research Center for Superconducting Materials and Electronics, Osaka University
3rd Author's Name Masayoshi Tonouchi
3rd Author's Affiliation Research Center for Superconducting Materials and Electronics, Osaka University : CREST/JST
4th Author's Name Masanori Hangyo
4th Author's Affiliation Research Center for Superconducting Materials and Electronics, Osaka University
Date 2000/1/26
Paper # SCE99-42
Volume (vol) vol.99
Number (no) 586
Page pp.pp.-
#Pages 6
Date of Issue