Presentation 2000/1/26
1/f noise properties in Nb/Al+AlO_x, constrictions/Nb devices
N. Sato, A. Saito, A. Kawakami, Z. Wang, M. Tanaka, S. Tahara, K. Hamasaki,
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Abstract(in English) We have measured the 1/f noise in Nb/Al-AlO_x/Nb and Nb/constrictions/Nb junctions as a function of bias voltage. The 1/f noise parameter η of these superconducting weak link devices strongly depends on the device quality factor Q. Using the Blonder, Tinkham and Klapwijk (BTK) theory we give a simple relationship between the Q value and the Andreev reflection probability A(E). Within the framework of this single-Andreev reflection model, we found that the weak link devices exhibit low 1/f noise with a parameter η that scales approximately as η∝A(E)(1-A(E)).
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Keyword(in English) 1/f noise / superconducting weak link device / Andreev reflection probability
Paper # SCE99-39
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Committee SCE
Conference Date 2000/1/26(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1/f noise properties in Nb/Al+AlO_x, constrictions/Nb devices
Sub Title (in English)
Keyword(1) 1/f noise
Keyword(2) superconducting weak link device
Keyword(3) Andreev reflection probability
1st Author's Name N. Sato
1st Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology()
2nd Author's Name A. Saito
2nd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
3rd Author's Name A. Kawakami
3rd Author's Affiliation KARC Communications Research Laboratory
4th Author's Name Z. Wang
4th Author's Affiliation KARC Communications Research Laboratory
5th Author's Name M. Tanaka
5th Author's Affiliation Fundamental Research Laboratories, NEC Corporation
6th Author's Name S. Tahara
6th Author's Affiliation Fundamental Research Laboratories, NEC Corporation
7th Author's Name K. Hamasaki
7th Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
Date 2000/1/26
Paper # SCE99-39
Volume (vol) vol.99
Number (no) 586
Page pp.pp.-
#Pages 6
Date of Issue