Presentation | 1998/11/16 Noise Properties of High T_c SQUID Fabricated with Bicrystal Junctions Tadashi Minotani, Fumio Shiraishi, Atsushi Kandori, Keiji Enpuku, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Properties of high T_c SQUID utilizing bicrystal junction are studied. First, transport mechanism in the bicrystal junction is studied from the dependence of junction parameters on the misorientation angle of the bicrystal substrate. Next, properties of the SQUID made with the 30 degree junctions are quantitatively compared with the simulation results. Good agreement is obtained on the voltage modulation depth, while the measured flux noise is about 2 or 3 times higher compared with the simulation result. The reason for the large noise is discussed from the point of junction quality. The critical current fluctuation of the junction is also estimated from the 1/f flux noise, and its dependence on the junction parameters, such as critical current and resistance, is studied. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | High T_c SQUID / 30-degree bicrystal junction / flux noise / 1/f noise |
Paper # | SCE98-28 |
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Conference Information | |
Committee | SCE |
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Conference Date | 1998/11/16(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Noise Properties of High T_c SQUID Fabricated with Bicrystal Junctions |
Sub Title (in English) | |
Keyword(1) | High T_c SQUID |
Keyword(2) | 30-degree bicrystal junction |
Keyword(3) | flux noise |
Keyword(4) | 1/f noise |
1st Author's Name | Tadashi Minotani |
1st Author's Affiliation | Department of Electronic Device Engineering, ISEE, Kyushu University() |
2nd Author's Name | Fumio Shiraishi |
2nd Author's Affiliation | Department of Electronic Device Engineering, ISEE, Kyushu University |
3rd Author's Name | Atsushi Kandori |
3rd Author's Affiliation | Department of Electronic Device Engineering, ISEE, Kyushu University |
4th Author's Name | Keiji Enpuku |
4th Author's Affiliation | Department of Electronic Device Engineering, ISEE, Kyushu University |
Date | 1998/11/16 |
Paper # | SCE98-28 |
Volume (vol) | vol.98 |
Number (no) | 399 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |