| Presentation | 1998/11/16 Overdamped NbN josephson junctions using Nb/AlOx/Nb trilayer technology T. Iwai, T. Aoyama, R. Oke, H. Akaike, A. Fujimaki, H. Hayakawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated overdamped NbN/Nb/AlOx/Nb/NbN Josephson junction. The junctions are based on Nb/AlOx/Nb trilayer technology and the Nb/AlOx/Nb is used as junction barriers. We obtained overdamped junctions with Jc up to 0.44kA/cm^2 and the IcR product up to 0.16mV at 10K. The junction characteristics at 4.2K were investigated from a viewpoint of the dependence of film thickness of the Nb layers. The Jc increased from 0.28 to 4.1kA/cm^2 when upper and lower Nb film thicknesses were decreased in the range of 0-20 nm. The dependence of Ic on the temperature changed from the exponential decrease to quasi-linear one with decreasing film thickness of Nb layers. These characteristics were due to the junction's behaving as a Superconductor-Normal layer-Insulator-Normal layer-Superconductor junction. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | NbN / Nb/AlOx/Nb technology / 10K / Overdamped junction / SNINS |
| Paper # | SCE98-26 |
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| Conference Information | |
| Committee | SCE |
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| Conference Date | 1998/11/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Superconductive Electronics (SCE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Overdamped NbN josephson junctions using Nb/AlOx/Nb trilayer technology |
| Sub Title (in English) | |
| Keyword(1) | NbN |
| Keyword(2) | Nb/AlOx/Nb technology |
| Keyword(3) | 10K |
| Keyword(4) | Overdamped junction |
| Keyword(5) | SNINS |
| 1st Author's Name | T. Iwai |
| 1st Author's Affiliation | Department of Quantum Engineering, Nagoya University() |
| 2nd Author's Name | T. Aoyama |
| 2nd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 3rd Author's Name | R. Oke |
| 3rd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 4th Author's Name | H. Akaike |
| 4th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 5th Author's Name | A. Fujimaki |
| 5th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 6th Author's Name | H. Hayakawa |
| 6th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| Date | 1998/11/16 |
| Paper # | SCE98-26 |
| Volume (vol) | vol.98 |
| Number (no) | 399 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |