Presentation 1999/1/27
Design of rf-SQUID Memory Cell Using Single Flux Quantum
Kyouichi Kenmoku, Susumu Takada,
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Abstract(in English) This paper presents the design and computer simulation of a new type of Josephson memory cell. It has a simpler stracture than the conventional Josephson memory cell by using an rf-SQUID as a cell. Binary data are represented by existing one single flux quantum. Read-out operation is performed by detecting pulse current generated with rf-SQUID. Since this memory cell is destructively readout, autorewrite circcuit is required. Computer simulations show the operaton for 260ps cycle time supposing a 16-kbit Josephson RAM. Design showed a 18μm square occupation area for the cell in which minimum line width was 2μm, minimum junction size was 2μm square and a current density was 5.0kA/cm^2 with Nb/AlO_x/Nb junction.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) rf-SQUID / memory cell / single flux quantum
Paper # SCE98-41
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Committee SCE
Conference Date 1999/1/27(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design of rf-SQUID Memory Cell Using Single Flux Quantum
Sub Title (in English)
Keyword(1) rf-SQUID
Keyword(2) memory cell
Keyword(3) single flux quantum
1st Author's Name Kyouichi Kenmoku
1st Author's Affiliation Faculty of Engineering, Saitama University()
2nd Author's Name Susumu Takada
2nd Author's Affiliation Faculty of Engineering, Saitam University
Date 1999/1/27
Paper # SCE98-41
Volume (vol) vol.98
Number (no) 564
Page pp.pp.-
#Pages 6
Date of Issue