Presentation 1993/12/8
A study of the junction characteristics of oxide 3-terminal device(2)
Ryodo Kawasaki, Tomoyuki Yamada, Hitoshi A,
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Abstract(in English) We reported the AC characteristics of In, (Ba,Rb)BiO_3 and(Ba,Rb) BiO_3/Nb doped SrTiO_3 junctions.We proposed the equivalent circuit of these junctions.From these results we analyze these junction especially series resistance.We calculate the maximum available power gain of this device.The improvement of this transistor for higher frequency operation was discussed.
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Keyword(in English) In/Ba,Rb)BiO_3/b doped SrTiO_3 transistor / AC characteristics / Maximum available power gain
Paper # SCE93-51
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Committee SCE
Conference Date 1993/12/8(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A study of the junction characteristics of oxide 3-terminal device(2)
Sub Title (in English)
Keyword(1) In/Ba,Rb)BiO_3/b doped SrTiO_3 transistor
Keyword(2) AC characteristics
Keyword(3) Maximum available power gain
1st Author's Name Ryodo Kawasaki
1st Author's Affiliation Oki Electric Industry Co.,Ltd.()
2nd Author's Name Tomoyuki Yamada
2nd Author's Affiliation Oki Electric Industry Co.,Ltd.
3rd Author's Name Hitoshi A
3rd Author's Affiliation Oki Electric Industry Co.,Ltd.
Date 1993/12/8
Paper # SCE93-51
Volume (vol) vol.93
Number (no) 363
Page pp.pp.-
#Pages 6
Date of Issue