Presentation 1993/12/8
Fabrication of GdBa_2Cu_3O_x/Gd_2CuO_4/GdBa_2Cu_3O_x trilayers
Masahiro Fukuta, Masumi Inoue, Yoshiaki Takai, Hisao Hayakawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have chosen compounds with the same elements for a superconductor and an insulator of SIS junctions,i.e.,GdBa_2Cu_3O_ x (GBCO)and Gd_2CuO_4(GCO),respectively.Using these materials,we fabricated SIS junctions by the electron beam co-evaporation method,and investigated the properties of GBCO, GCO/GBCO trilayers. Their current-voltage characteristics showed conductance peaks, which seemed to be energy gap structures(2Δ~20mV),at 4.2K.The zer o bias conductance peak was observed and the conductance was proportional to the voltage in the high bias region.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GdBa_2Cu_3O_x / Gd_2CuO_4 / electron beam evaporation / energy gap structure / zero bias conductance peak
Paper # SCE93-47
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Conference Information
Committee SCE
Conference Date 1993/12/8(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of GdBa_2Cu_3O_x/Gd_2CuO_4/GdBa_2Cu_3O_x trilayers
Sub Title (in English)
Keyword(1) GdBa_2Cu_3O_x
Keyword(2) Gd_2CuO_4
Keyword(3) electron beam evaporation
Keyword(4) energy gap structure
Keyword(5) zero bias conductance peak
1st Author's Name Masahiro Fukuta
1st Author's Affiliation Department of Quantumengineering,Faculty of Engineering,Nagoya University()
2nd Author's Name Masumi Inoue
2nd Author's Affiliation Department of Electronics,Faculty of Engineering,Nagoya University
3rd Author's Name Yoshiaki Takai
3rd Author's Affiliation Department of Electronics,Faculty of Engineering,Nagoya University
4th Author's Name Hisao Hayakawa
4th Author's Affiliation Department of Electronics,Faculty of Engineering,Nagoya University
Date 1993/12/8
Paper # SCE93-47
Volume (vol) vol.93
Number (no) 363
Page pp.pp.-
#Pages 5
Date of Issue