Presentation | 1993/12/8 Fabrication of GdBa_2Cu_3O_x/Gd_2CuO_4/GdBa_2Cu_3O_x trilayers Masahiro Fukuta, Masumi Inoue, Yoshiaki Takai, Hisao Hayakawa, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have chosen compounds with the same elements for a superconductor and an insulator of SIS junctions,i.e.,GdBa_2Cu_3O_ x (GBCO)and Gd_2CuO_4(GCO),respectively.Using these materials,we fabricated SIS junctions by the electron beam co-evaporation method,and investigated the properties of GBCO, GCO/GBCO trilayers. Their current-voltage characteristics showed conductance peaks, which seemed to be energy gap structures(2Δ~20mV),at 4.2K.The zer o bias conductance peak was observed and the conductance was proportional to the voltage in the high bias region. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GdBa_2Cu_3O_x / Gd_2CuO_4 / electron beam evaporation / energy gap structure / zero bias conductance peak |
Paper # | SCE93-47 |
Date of Issue |
Conference Information | |
Committee | SCE |
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Conference Date | 1993/12/8(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of GdBa_2Cu_3O_x/Gd_2CuO_4/GdBa_2Cu_3O_x trilayers |
Sub Title (in English) | |
Keyword(1) | GdBa_2Cu_3O_x |
Keyword(2) | Gd_2CuO_4 |
Keyword(3) | electron beam evaporation |
Keyword(4) | energy gap structure |
Keyword(5) | zero bias conductance peak |
1st Author's Name | Masahiro Fukuta |
1st Author's Affiliation | Department of Quantumengineering,Faculty of Engineering,Nagoya University() |
2nd Author's Name | Masumi Inoue |
2nd Author's Affiliation | Department of Electronics,Faculty of Engineering,Nagoya University |
3rd Author's Name | Yoshiaki Takai |
3rd Author's Affiliation | Department of Electronics,Faculty of Engineering,Nagoya University |
4th Author's Name | Hisao Hayakawa |
4th Author's Affiliation | Department of Electronics,Faculty of Engineering,Nagoya University |
Date | 1993/12/8 |
Paper # | SCE93-47 |
Volume (vol) | vol.93 |
Number (no) | 363 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |