Presentation 1993/10/20
Growth and Characterization of Epitaxial SrTiO_3 Thin Films with Prominent Polarizability
Mamoru Iwabuchi, Takeshi Ashida, Takeshi Kobayashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Epitaxial SrTiO_3(STO)thin films were grown on(111)Pt, (100)MgO substrate successfully by the rf magnetron sputtering.At present, the dielectric constant of 110-nm-thick STO thin films reached as high as 370ε_0 at room temperature.The polarization of this film r eached the range of 10^14> cm^-2>,which was a significant step toward the application for use for a insulator ofthe superconducting MISFETs and the Si 256 Mbits DRAM.Cr/(100)STO/(111) Pt MIM′structures were prepared and their I-V and C-V properties w ere measured.Taking them into account,some possible band diagram of STO were discussed.Consequently,the band diagram where STO layer included no space-charge was concluded as a much proper one. This result is not only important for better knowledge and application of STO thin films but also essential for the understanding of the superconducting field-effect.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SrTiO_3 / highlydielectric constant / FTIR spectra / rectifying action / Schottky barrier / space-charge-free band model
Paper # SCE93-44
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Conference Information
Committee SCE
Conference Date 1993/10/20(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth and Characterization of Epitaxial SrTiO_3 Thin Films with Prominent Polarizability
Sub Title (in English)
Keyword(1) SrTiO_3
Keyword(2) highlydielectric constant
Keyword(3) FTIR spectra
Keyword(4) rectifying action
Keyword(5) Schottky barrier
Keyword(6) space-charge-free band model
1st Author's Name Mamoru Iwabuchi
1st Author's Affiliation Department of Electrical Engineering,Faculty of Engineering Science,Osaka University()
2nd Author's Name Takeshi Ashida
2nd Author's Affiliation Department of Electrical Engineering,Faculty of Engineering Science,Osaka University
3rd Author's Name Takeshi Kobayashi
3rd Author's Affiliation Department of Electrical Engineering,Faculty of Engineering Science,Osaka University
Date 1993/10/20
Paper # SCE93-44
Volume (vol) vol.93
Number (no) 279
Page pp.pp.-
#Pages 6
Date of Issue