Presentation 1993/10/20
NbN/AlN/NbN Tunnel Junctions with High Critical Current Density
Zhen Wang, Akira Kawakami, Yoshinori Uzawa, Bokuji Komiyama,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) NbN, AlN/NbN tunnel junctions are fabricated on ambient temperature MgO substrates.A critical current density of 8,000 A/ cm^2 is obtained in junctions with 1.5-nm-thick AlN barriers.The junctions show a large gap voltage(Vg=5 mV),sharp quasipartical current rise(△Vg=0.18 mV)and small subgap leakage current(Vm=20 mV ),even though the NbN/AlN/NbN trilayers are deposited without intentional heating.This report shows that high quality NbN/AlN/ NbN tunnel junctions can be made at ambient substrate temperature.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Tunnel junctions / Criticul current density / Gap voltage / Fabrication at ambient temperature
Paper # SCE93-37
Date of Issue

Conference Information
Committee SCE
Conference Date 1993/10/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) NbN/AlN/NbN Tunnel Junctions with High Critical Current Density
Sub Title (in English)
Keyword(1) Tunnel junctions
Keyword(2) Criticul current density
Keyword(3) Gap voltage
Keyword(4) Fabrication at ambient temperature
1st Author's Name Zhen Wang
1st Author's Affiliation Communications Research Laboratory,Ministry,of Posts and Telecommunications()
2nd Author's Name Akira Kawakami
2nd Author's Affiliation Communications Research Laboratory,Ministry,of Posts and Telecommunications
3rd Author's Name Yoshinori Uzawa
3rd Author's Affiliation Communications Research Laboratory,Ministry,of Posts and Telecommunications
4th Author's Name Bokuji Komiyama
4th Author's Affiliation Communications Research Laboratory,Ministry,of Posts and Telecommunications
Date 1993/10/20
Paper # SCE93-37
Volume (vol) vol.93
Number (no) 279
Page pp.pp.-
#Pages 6
Date of Issue