Presentation | 1993/7/26 Interfacial Study of Nb Josephson Junctions with AlOx,ZrOx and HfOx barriers by Cross-sectional Transmission Electron Microscopy Shinichi Morohashi, Shinya Hasuo, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Using cross-sectional transmission electron microscopy,we compared Nb, AlOx-Al/Nb junction with Nb/ZrOx-Zr/Nb and Nb/HfOx-Hf/ Nb junctions,and studied the interfaces of Nb Josephson junctions with an overlayer structure.The interface between the Zr layer and Nb base electrode,and that between the Hf layer and Nb were smoother than that between the Al layer and Nb.The roughness of the interface between Al and Nb is caused by not the roughness of the original Nb base electrode but grain boundary diffusion following Al deposition.Annealing increaged the roughness of the interface between Al and Nb,but had very little effects on the interfaces between Zr and Nb,or Hf and Nb.We attribute these effects to the differences in the melting points of the various overlayers. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Josephson junction / Cross-sectional Transmission Electron Microscopy |
Paper # | SCE93-28 |
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Committee | SCE |
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Conference Date | 1993/7/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Interfacial Study of Nb Josephson Junctions with AlOx,ZrOx and HfOx barriers by Cross-sectional Transmission Electron Microscopy |
Sub Title (in English) | |
Keyword(1) | Josephson junction |
Keyword(2) | Cross-sectional Transmission Electron Microscopy |
1st Author's Name | Shinichi Morohashi |
1st Author's Affiliation | FUJITSU LABORATORIES LTD.() |
2nd Author's Name | Shinya Hasuo |
2nd Author's Affiliation | FUJITSU LABORATORIES LTD. |
Date | 1993/7/26 |
Paper # | SCE93-28 |
Volume (vol) | vol.93 |
Number (no) | 166 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |