Presentation 1993/7/26
Observation of Electrical Field Effects in Highly Resistive Submicron NbN Bridges
Xiao Chen, Nobuyuki Yoshikawa, Masanori Sugahara,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Submicron NbN bridges whose thickness,width and length are 10nm, 100nm and 100-300nm respectively,have been fabricated,and their conduction properties and electrical field effects are measured. The samples having resistances larger than~100kΩ exhibit nonlinea r I-V characteristics with offset voltage of 2mV~12mV at low tempe ratures which are obviously similar to those of the single- electron charging effect in small tunnel junction arrays.The field effect modulation of the junction conductance is observed by applying a voltage to a gate electrode which is made over the NbN bridge.These charging effects are thought to arise from the granular structure of NbN bridges.The simulation results using one- dimensional SET junction arrays coincide well with experimental results.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) bridge junction / single-electron-tunneling effect / electrical field effect / NbN junction
Paper # SCE93-27
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Conference Information
Committee SCE
Conference Date 1993/7/26(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Observation of Electrical Field Effects in Highly Resistive Submicron NbN Bridges
Sub Title (in English)
Keyword(1) bridge junction
Keyword(2) single-electron-tunneling effect
Keyword(3) electrical field effect
Keyword(4) NbN junction
1st Author's Name Xiao Chen
1st Author's Affiliation Faculty of Engineering,Yokohama National University()
2nd Author's Name Nobuyuki Yoshikawa
2nd Author's Affiliation Faculty of Engineering,Yokohama National University
3rd Author's Name Masanori Sugahara
3rd Author's Affiliation Faculty of Engineering,Yokohama National University
Date 1993/7/26
Paper # SCE93-27
Volume (vol) vol.93
Number (no) 166
Page pp.pp.-
#Pages 6
Date of Issue