Presentation | 1996/7/24 Analysis of high-Tc SQUIDs with large capacitance components M. Matsuda, M. Kubo, S. Kuriki, K. Masuzawa, D. Suzuki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Effects of large capacitance on the characteristics of high-Tc dc-SQUID are studied. In fabricating grain boundary junction SQUIDs,SrTiO_3 substrate is commonly used though it has high dielectric constant. Especially, for the SQUID with inductance by a narrow slit, large amount of parasitic capacitance can exist between the slit. Numerical simulations on characteristics of SQUIDs with large capacitance components parallel to the junctions or to the inductance, has been made by taking account the thermal noise at 77K. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | high-Tc / SQUID / large dielectric constant / parasitic capacitance / modulation voltage |
Paper # | SCE96-17 |
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Conference Information | |
Committee | SCE |
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Conference Date | 1996/7/24(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analysis of high-Tc SQUIDs with large capacitance components |
Sub Title (in English) | |
Keyword(1) | high-Tc |
Keyword(2) | SQUID |
Keyword(3) | large dielectric constant |
Keyword(4) | parasitic capacitance |
Keyword(5) | modulation voltage |
1st Author's Name | M. Matsuda |
1st Author's Affiliation | Muroran Institute of Technology() |
2nd Author's Name | M. Kubo |
2nd Author's Affiliation | Research Institute for Electronic Science, Hokkaido University |
3rd Author's Name | S. Kuriki |
3rd Author's Affiliation | Research Institute for Electronic Science, Hokkaido University |
4th Author's Name | K. Masuzawa |
4th Author's Affiliation | Muroran Institute of Technology |
5th Author's Name | D. Suzuki |
5th Author's Affiliation | Research Institute for Electronic Science, Hokkaido University |
Date | 1996/7/24 |
Paper # | SCE96-17 |
Volume (vol) | vol.96 |
Number (no) | 174 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |