Presentation 1996/7/24
Analysis of high-Tc SQUIDs with large capacitance components
M. Matsuda, M. Kubo, S. Kuriki, K. Masuzawa, D. Suzuki,
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Abstract(in English) Effects of large capacitance on the characteristics of high-Tc dc-SQUID are studied. In fabricating grain boundary junction SQUIDs,SrTiO_3 substrate is commonly used though it has high dielectric constant. Especially, for the SQUID with inductance by a narrow slit, large amount of parasitic capacitance can exist between the slit. Numerical simulations on characteristics of SQUIDs with large capacitance components parallel to the junctions or to the inductance, has been made by taking account the thermal noise at 77K.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) high-Tc / SQUID / large dielectric constant / parasitic capacitance / modulation voltage
Paper # SCE96-17
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Conference Information
Committee SCE
Conference Date 1996/7/24(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of high-Tc SQUIDs with large capacitance components
Sub Title (in English)
Keyword(1) high-Tc
Keyword(2) SQUID
Keyword(3) large dielectric constant
Keyword(4) parasitic capacitance
Keyword(5) modulation voltage
1st Author's Name M. Matsuda
1st Author's Affiliation Muroran Institute of Technology()
2nd Author's Name M. Kubo
2nd Author's Affiliation Research Institute for Electronic Science, Hokkaido University
3rd Author's Name S. Kuriki
3rd Author's Affiliation Research Institute for Electronic Science, Hokkaido University
4th Author's Name K. Masuzawa
4th Author's Affiliation Muroran Institute of Technology
5th Author's Name D. Suzuki
5th Author's Affiliation Research Institute for Electronic Science, Hokkaido University
Date 1996/7/24
Paper # SCE96-17
Volume (vol) vol.96
Number (no) 174
Page pp.pp.-
#Pages 6
Date of Issue